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LPV358DE4

Texas Instruments

LPV358DE4 by Texas Instruments

LPV358DE4 by Texas Instruments is a dual operational amplifier with a max input offset voltage of 10000 uV and a nominal voltage of 5 V. With micropower technology, it operates in industrial temperatures from -40 to 85 °C, making it ideal for precision signal conditioning applications. The package style is small outline with gull wing terminals, suitable for surface mount designs requiring high common mode rejection ratio and low bias current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,038 parts In-Stock

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Vyrian

USA . 1,925 parts In-Stock

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1,925

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Distributors (Availability)

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Parana Technologies

USA . 1,723 parts In-Stock

1+ parts

$3.973

100+ parts

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$4.442

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1,723

$3.973

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$4.442

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ChromeModa Solutions

Germany . 2,496 parts In-Stock

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$4.464

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$3.660

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2,496

$4.464

$3.660

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IDEA Electronic Components Group

UK . 934 parts In-Stock

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$4.464

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$4.018

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934

$4.464

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One Stop Electronics

USA . 308 parts In-Stock

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$5.410

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308

$5.410

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AZTECH Wire

Italy . 607 parts In-Stock

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$18.442

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607

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Corphita

USA . 3,921 parts In-Stock

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Perfect Parts

USA . 3,022 parts In-Stock

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DigiPath Technology Company

USA . 1,054 parts In-Stock

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$4.025

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Microchip USA

USA . 200 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the LPV358DE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers exceptional quality and reliability. This operational amplifier is versatile, offering a wide range of applications in various electronic circuits. With low power consumption and high performance, the LPV358DE4 provides value and efficiency to your projects. Trust Texas Instruments to enhance your designs with cutting-edge technology and superior products like the LPV358DE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside the package, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 10000 uV

Low input offset voltage allows for accurate signal amplification and minimal distortion in the output.

Surface Mount: YES

Ease of installation and space-saving design for modern circuit board layouts.

Nominal Common Mode Reject Ratio: 71 dB

High rejection of common mode noise for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage levels in most applications.

Minimum Voltage Gain: 10000

High voltage gain amplifies weak input signals effectively.

Technology: BIPOLAR

Provides reliable and stable performance in a wide range of operating conditions.

Architecture: VOLTAGE-FEEDBACK

Ensures high linearity and stability in voltage amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LPV358DE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

60 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

24 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LPV358DE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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