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LPV324IPWR

Texas Instruments

LPV324IPWR by Texas Instruments

LPV324IPWR by Texas Instruments is a quad operational amplifier with 11000 uV max input offset voltage, 71 dB nominal CMRR, and 237 kHz unity gain bandwidth. Ideal for automotive applications due to its micropower feature, it operates b/w -40 to 125 °C with a supply voltage of 2.7/5 V. The package style is small outline, thin profile, shrink pitch in plastic/epoxy material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,843 parts In-Stock

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Digiode

USA . 3,645 parts In-Stock

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ComSIT Distribution GmbH

Germany . 795 parts In-Stock

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ComSIT USA

USA . 795 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 176 parts In-Stock

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$5.271

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$5.895

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176

$5.271

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$5.895

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DigiPath Technology Company

USA . 1,815 parts In-Stock

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$5.805

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$5.340

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ChromeModa Solutions

Germany . 4,327 parts In-Stock

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$5.923

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$4.857

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$5.923

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IDEA Electronic Components Group

UK . 1,474 parts In-Stock

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$5.923

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$5.331

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One Stop Electronics

USA . 1,320 parts In-Stock

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$8.410

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AZTECH Wire

Italy . 643 parts In-Stock

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$9.819

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QUARKTWIN TECHNOLOGY LTD

USA . 26,530 parts In-Stock

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 9,586 parts In-Stock

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Microchip USA

USA . 5,269 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,724 parts In-Stock

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Corphita

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Metaverse IC Inc.

Canada . 2,500 parts In-Stock

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Overview

Looking for a reliable Operational Amplifier (Op Amp) that delivers exceptional performance? Look no further than the LPV324IPWR by Texas Instruments. With a trusted manufacturer like Texas Instruments, you can expect top-notch quality and reliability. This versatile Op Amp is ideal for a wide range of applications, providing customers with precise results and efficient operation. Experience the value and benefits of the LPV324IPWR and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage ensures accurate signal processing.

Nominal Supply Voltage / Vsup (V): 5

Suitable for a wide range of applications requiring a 5V power supply.

Frequency Compensation: YES

Stability and performance are enhanced with frequency compensation.

Nominal Unity Gain Bandwidth: 237 kHz

High unity gain bandwidth for efficient signal processing.

Technology: BIPOLAR

Bipolar technology allows for precise voltage control and low noise operation.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals with high accuracy and low distortion.

Technical Specifications

Operational Amplifiers (Op Amps) LPV324IPWR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

125 μA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

LPV324IPWR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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