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LPV324IDRE4

Texas Instruments

LPV324IDRE4 by Texas Instruments

LPV324IDRE4 by Texas Instruments is a quad operational amplifier with 11000 uV max input offset voltage, 71 dB common mode reject ratio, and 237 kHz unity gain bandwidth. Ideal for automotive applications due to its micropower technology and wide temperature range of -40 to 125 °C. Suitable for surface mount designs in compact spaces with its small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,878 parts In-Stock

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Digiode

USA . 3,643 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 766 parts In-Stock

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$4.410

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$4.410

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Parana Technologies

USA . 1,731 parts In-Stock

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$6.543

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$7.284

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1,731

$6.543

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$7.284

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ChromeModa Solutions

Germany . 5,805 parts In-Stock

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$7.352

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$6.029

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$7.352

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IDEA Electronic Components Group

UK . 680 parts In-Stock

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$7.352

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$6.617

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AZTECH Wire

Italy . 812 parts In-Stock

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$11.528

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Component Stockers USA

USA . 780 parts In-Stock

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$99.990

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Microchip USA

USA . 5,494 parts In-Stock

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DigiPath Technology Company

USA . 1,650 parts In-Stock

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$6.629

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Corphita

USA . 686 parts In-Stock

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Overview

Experience high-quality performance with the LPV324IDRE4 from Texas Instruments, a leading manufacturer in the industry. Designed for operational amplifiers (Op Amps), this versatile product offers exceptional value with its micropower technology and wide temperature range suitable for automotive applications. With a compact package style and surface mount capability, the LPV324IDRE4 provides precise voltage feedback and low power consumption, making it an ideal choice for your amplification needs. Trust Texas Instruments for reliable solutions that deliver efficiency and reliability in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and versatility for a wide range of applications.

Maximum Input Offset Voltage: 11000 uV

Low offset voltage ensures accurate and precise signal amplification.

Maximum Average Bias Current (IIB): 0.065 uA

Low bias current helps in minimizing power consumption and improving efficiency.

Surface Mount: YES

Allows for easy and convenient installation on PCBs.

No. of Functions: 4

Provides multiple functionalities in a single device, saving space and cost.

Nominal Common Mode Reject Ratio: 71 dB

High common mode rejection ratio ensures minimal interference from noise.

Nominal Supply Voltage / Vsup (V): 5

Works well within the standard supply voltage range for most electronic devices.

Power Supplies (V): 2.7/5

Compatible with a range of power supply voltages for flexibility in application.

No. of Terminals: 14

Provides multiple connection points for interfacing with other components.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for industrial applications.

Technical Specifications

Operational Amplifiers (Op Amps) LPV324IDRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

125 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LPV324IDRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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