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LPV324ID

Texas Instruments

LPV324ID by Texas Instruments

LPV324ID by Texas Instruments is a quad operational amplifier with 11000uV max input offset voltage, 71dB CMRR, and 237kHz unity gain bandwidth. Ideal for automotive applications due to its micropower technology and wide temperature range of -40 to 125°C. Suitable for surface mount designs with small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,386 parts In-Stock

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Digiode

USA . 289 parts In-Stock

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289

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Atlantic Semiconductor

USA . 34 parts In-Stock

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34

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Bristol Electronics

USA . 20 parts In-Stock

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One Stop Electronics

USA . 508 parts In-Stock

1+ parts

$1.410

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508

$1.410

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Parana Technologies

USA . 436 parts In-Stock

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$3.416

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$3.941

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436

$3.416

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$3.941

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ChromeModa Solutions

Germany . 2,020 parts In-Stock

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$3.838

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$3.147

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$3.838

$3.147

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IDEA Electronic Components Group

UK . 509 parts In-Stock

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$3.838

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$3.454

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509

$3.838

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$3.454

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AZTECH Wire

Italy . 672 parts In-Stock

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$9.770

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672

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Corphita

USA . 3,086 parts In-Stock

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Microchip USA

USA . 108 parts In-Stock

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DigiPath Technology Company

USA . 38 parts In-Stock

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$3.460

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$3.460

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Overview

Elevate your circuits with the LPV324ID by Texas Instruments, a top-tier operational amplifier that delivers precision and reliability. Designed with cutting-edge technology, this amplifier offers unparalleled performance for a wide range of applications. From automotive to industrial uses, the LPV324ID ensures optimal functionality and efficiency. Trust in Texas Instruments' legacy of excellence and choose the LPV324ID for superior quality and unmatched value in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the operational amplifier, making it suitable for various environmental conditions.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage ensures accurate signal processing and minimal errors in the output.

Maximum Average Bias Current (IIB): 0.065 uA

Low bias current minimizes power consumption and ensures stable operation.

Surface Mount: YES

Easy to integrate into circuit boards and saves space, suitable for compact designs.

Nominal Common Mode Reject Ratio: 71 dB

High common mode rejection ratio allows the amplifier to reject noise and interference, leading to clean and accurate output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, compatible with many power sources.

Technology: BIPOLAR

Bipolar technology ensures high accuracy, fast response, and low noise in the amplifier circuit.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals with precision and stability, suitable for various applications requiring signal amplification.

Technical Specifications

Operational Amplifiers (Op Amps) LPV324ID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

2.7/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

237 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

65 nA

Maximum Bias Current (IIB) @25 °C:

50 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

125 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LPV324ID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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