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LMX2541SQE2690E

Texas Instruments

LMX2541SQE2690E by Texas Instruments

LMX2541SQE2690E by Texas Instruments is a PLL frequency synthesizer with 36 terminals, operating at 3.3V. It features a square package shape, industrial temperature grade, and BICMOS technology. Ideal for applications requiring precise frequency synthesis in compact designs with a wide operating temperature range from -40 to 85°C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,379 parts In-Stock

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Digiode

USA . 2,103 parts In-Stock

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Anansix

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AZTECH Wire

Italy . 702 parts In-Stock

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One Stop Electronics

USA . 781 parts In-Stock

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Parana Technologies

USA . 1,820 parts In-Stock

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DigiPath Technology Company

USA . 1,821 parts In-Stock

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ChromeModa Solutions

Germany . 3,856 parts In-Stock

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Corphita

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Kepictronics

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Overview

Unlock precision and reliability with the LMX2541SQE2690E by Texas Instruments, a leading manufacturer in Phase Locked Loops (PLL) & Frequency Synthesis Circuits. This product boasts a square package shape and surface mount technology, making it ideal for a wide range of applications. Offering a nominal supply voltage of 3.3V and a wide operating temperature range, this PLL frequency synthesizer provides unparalleled performance and durability. Experience seamless integration, top-notch quality, and unmatched value with the LMX2541SQE2690E. Elevate your projects to new heights with this innovative solution from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Easy to integrate into circuit boards, saves space and reduces manufacturing costs.

Package Shape: SQUARE

Square shape allows for efficient use of space on the circuit board.

Nominal Supply Voltage (Vsup): 3.3 V

Operates at a commonly used voltage level, making it compatible with many systems.

No. of Terminals: 36

Sufficient number of terminals for connecting to other components and interfaces.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Provides good thermal performance and allows for compact design.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

Can operate in low temperature environments without issues.

Terminal Position: QUAD

Quad terminal position allows for easy and secure connection to the circuit.

Maximum Seated Height: 0.8 mm

Low profile design for space-constrained applications.

Width (mm): 6 mm

Compact size helps in fitting into tight spaces on the circuit board.

Other IC type: PLL FREQUENCY SYNTHESIZER

Capable of generating stable and accurate frequencies for various applications.

Minimum Supply Voltage (Vsup): 3.15 V

Operates at a low minimum voltage, ensuring power efficiency.

Length: 6 mm

Compact length for space-saving on the circuit board.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial operating conditions.

Technology: BICMOS

Utilizes BiCMOS technology for high performance and low power consumption.

Terminal Form: NO LEAD

Lead-free terminal form for environmental friendliness and compliance with regulations.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density packaging and precise connection.

Maximum Supply Voltage (Vsup): 3.45 V

Operates within a safe voltage range for enhanced reliability.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2541SQE2690E attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-XQCC-N36

Length:

6 mm

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

6 mm

Trade Compliance

LMX2541SQE2690E Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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