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LMX2353SLBX

Texas Instruments

LMX2353SLBX by Texas Instruments

Texas Instruments' LMX2353SLBX is a Phase Locked Loop IC with 16 terminals, operating voltage of 2.7-5.5V, and temperature range of -40 to 85°C. Suitable for industrial applications, this PLL chip carrier has a ceramic-metal package and quad terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,891 parts In-Stock

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3,891

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Digiode

USA . 2,389 parts In-Stock

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2,389

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Anansix

USA . 1,880 parts In-Stock

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1,880

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Distributors (Availability)

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One Stop Electronics

USA . 1,504 parts In-Stock

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$6.500

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1,504

$6.500

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AZTECH Wire

Italy . 781 parts In-Stock

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$14.399

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781

$14.399

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Parana Technologies

USA . 2,051 parts In-Stock

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$18.992

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$19.051

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2,051

$18.992

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$19.051

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DigiPath Technology Company

USA . 588 parts In-Stock

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$20.912

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588

$20.912

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ChromeModa Solutions

Germany . 2,788 parts In-Stock

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$21.339

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$17.498

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2,788

$21.339

$17.498

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IDEA Electronic Components Group

UK . 1,304 parts In-Stock

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$21.339

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$20.272

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$19.205

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1,304

$21.339

$20.272

$19.205

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A-Z Elektronik GmbH

Germany . 7,379 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,426 parts In-Stock

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Corphita

USA . 1,762 parts In-Stock

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Microchip USA

USA . 158 parts In-Stock

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158

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Overview

Unlock the power of precision frequency synthesis with the LMX2353SLBX by Texas Instruments. This high-quality Phase Locked Loop (PLL) offers unmatched performance and reliability in a compact square package. Ideal for industrial applications, this chip carrier delivers seamless frequency control with a nominal supply voltage of 3V. Trust in Texas Instruments' legacy of excellence and experience the value of superior frequency synthesis with the LMX2353SLBX.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection and durability, making the product suitable for industrial environments.

Nominal Supply Voltage (Vsup): 3 V

The specified voltage ensures stable and reliable operation of the product within the recommended range.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the product to function effectively even in elevated temperature conditions.

Technology: BICMOS

The use of BiCMOS technology enhances the performance and efficiency of the product, making it ideal for advanced applications.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2353SLBX attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-CQCC-N16

JESD-609 Code:

e0

Length:

3.5 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC16,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

3.5 mm

Trade Compliance

LMX2353SLBX Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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