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LMX2531LQE1226E

Texas Instruments

LMX2531LQE1226E by Texas Instruments

LMX2531LQE1226E by Texas Instruments is a PLL frequency synthesizer with 36 terminals, operating voltage range of 2.8V to 3.2V, and temperature grade of industrial (-40°C to 85°C). It features a square chip carrier package style with a very thin profile, suitable for surface mount applications in various electronic devices requiring precise frequency synthesis.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,794 parts In-Stock

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Vyrian

USA . 3,799 parts In-Stock

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Anansix

USA . 1,331 parts In-Stock

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Cogito LLC

Ukraine . 19 parts In-Stock

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Parana Technologies

USA . 1,967 parts In-Stock

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$5.062

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$5.630

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1,967

$5.062

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$5.630

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One Stop Electronics

USA . 175 parts In-Stock

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$5.500

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175

$5.500

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DigiPath Technology Company

USA . 1,512 parts In-Stock

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$5.574

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$5.128

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$5.574

$5.128

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ChromeModa Solutions

Germany . 1,440 parts In-Stock

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$5.688

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$4.664

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$5.688

$4.664

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IDEA Electronic Components Group

UK . 327 parts In-Stock

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$5.688

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$5.119

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327

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AZTECH Wire

Italy . 478 parts In-Stock

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$15.187

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478

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Lixinc

USA . 8,943 parts In-Stock

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Corphita

USA . 2,738 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Futuretech Components

Singapore . 138 parts In-Stock

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Overview

Elevate your frequency synthesis circuits with the cutting-edge LMX2531LQE1226E by Texas Instruments. Designed with precision and reliability in mind, this PLL frequency synthesizer offers unmatched performance for a wide range of applications. With its compact square package shape and industrial temperature grade, this chip carrier is ready to take on any challenge. Trust in Texas Instruments to deliver quality products that exceed expectations. Upgrade your systems today with the LMX2531LQE1226E and experience the difference firsthand.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on a circuit board, saving time and effort.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage level for stable and efficient operation of the PLL and frequency synthesis circuits.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications where heat may be a concern.

Technology: BICMOS

Utilizes a combination of bipolar and CMOS technologies, offering high speed performance and low power consumption.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2531LQE1226E attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e0

Length:

6 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.2 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

6 mm

Trade Compliance

LMX2531LQE1226E Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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