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LMX2531LQ2820E

Texas Instruments

LMX2531LQ2820E by Texas Instruments

LMX2531LQ2820E by Texas Instruments is a PLL frequency synthesizer with 36 terminals, operating voltage range of 2.8V to 3.2V, and temperature grade suitable for industrial applications (-40 to 85°C). This surface-mount chip carrier has a square shape, very thin profile, and BICMOS technology for precise frequency synthesis in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,470 parts In-Stock

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2,470

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Vyrian

USA . 1,973 parts In-Stock

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Anansix

USA . 1,069 parts In-Stock

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1,069

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One Stop Electronics

USA . 1,091 parts In-Stock

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$3.500

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$3.500

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AZTECH Wire

Italy . 838 parts In-Stock

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$9.400

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838

$9.400

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Parana Technologies

USA . 488 parts In-Stock

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$21.532

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$21.917

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488

$21.532

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DigiPath Technology Company

USA . 119 parts In-Stock

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$23.709

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$21.812

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119

$23.709

$21.812

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ChromeModa Solutions

Germany . 4,572 parts In-Stock

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$24.193

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$19.838

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$24.193

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IDEA Electronic Components Group

UK . 1,604 parts In-Stock

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$24.193

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$22.983

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$21.774

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1,604

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A-Z Elektronik GmbH

Germany . 5,174 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,449 parts In-Stock

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Corphita

USA . 1,882 parts In-Stock

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Overview

Unlock high-performance frequency synthesis with the Texas Instruments LMX2531LQ2820E PLL chip. Crafted by industry leader TI, this square-shaped PLL chip boasts a wide operating temperature range and a compact design for easy integration into various applications. From telecommunications to radar systems, this chip offers precise frequency control and reliable performance. Elevate your projects with the superior quality and advanced technology of the LMX2531LQ2820E PLL chip from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient mounting onto circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3 V

This voltage is commonly used in many electronic devices, making it compatible with a wide range of applications.

Package Style (Meter): CHIP CARRIER, VERY THIN PROFILE

The thin profile of the chip carrier package style helps save space and allows for dense packing on the circuit board.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand challenging thermal conditions, increasing reliability.

Technology: BICMOS

BiCMOS technology combines the advantages of both bipolar and CMOS technologies, providing high-performance and low power consumption.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2531LQ2820E attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-XQCC-N36

Length:

6 mm

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.2 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

6 mm

Trade Compliance

LMX2531LQ2820E Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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