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LMX2335LSLBX

Texas Instruments

LMX2335LSLBX by Texas Instruments

LMX2335LSLBX by Texas Instruments is a PLL frequency synthesizer with 16 terminals, operating voltage of 2.7-5.5V, and BICMOS technology. It has a compact square chip carrier package suitable for industrial applications, with temperature range of -40 to 85°C. Ideal for surface mount designs requiring precise frequency synthesis in tight spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,522 parts In-Stock

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7,522

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Digiode

USA . 2,972 parts In-Stock

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2,972

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Anansix

USA . 2,241 parts In-Stock

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2,241

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Distributors (Availability)

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One Stop Electronics

USA . 1,302 parts In-Stock

1+ parts

$7.500

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$7.500

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Parana Technologies

USA . 2,315 parts In-Stock

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$8.152

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$8.749

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2,315

$8.152

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$8.749

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AZTECH Wire

Italy . 753 parts In-Stock

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$8.454

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753

$8.454

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ChromeModa Solutions

Germany . 4,465 parts In-Stock

1+ parts

$9.159

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$7.510

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4,465

$9.159

$7.510

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IDEA Electronic Components Group

UK . 1,479 parts In-Stock

1+ parts

$9.159

100+ parts

$8.701

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$8.243

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1,479

$9.159

$8.701

$8.243

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Corphita

USA . 2,418 parts In-Stock

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2,418

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DigiPath Technology Company

USA . 1,070 parts In-Stock

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$8.258

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1,070

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$8.258

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Overview

Elevate your electronic devices with the cutting-edge performance of the Texas Instruments LMX2335LSLBX PLL Frequency Synthesizer. Crafted with precision by a renowned manufacturer, this chip carrier offers unparalleled reliability and accuracy for a wide range of applications. From telecommunications to industrial automation, this high-quality component ensures optimal frequency synthesis with minimal power consumption. Upgrade your systems today with the LMX2335LSLBX and experience the value of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection for the internal components of the PLL & Frequency Synthesis Circuit.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB mounting, making installation and assembly straightforward.

Nominal Supply Voltage (Vsup): 5 V

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration into existing systems convenient.

No. of Terminals: 16

Having 16 terminals provides flexibility in connecting the PLL & Frequency Synthesis Circuit to other components or systems for enhanced functionality.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this PLL & Frequency Synthesis Circuit can perform reliably in a variety of environmental conditions without overheating.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that the PLL & Frequency Synthesis Circuit remains functional even in extreme cold environments.

Technology: BICMOS

Utilizing BiCMOS technology offers a balance of high-speed operation and low power consumption, making this PLL & Frequency Synthesis Circuit efficient and responsive.

Maximum Supply Current (Isup): 2.6 mA

Drawing a maximum supply current of 2.6 mA, this product is energy-efficient and helps in reducing overall power consumption in the system.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2335LSLBX attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

S-PQCC-N16

Length:

3.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Maximum Seated Height:

1.1 mm

Maximum Supply Current (Isup):

2.6 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width (mm):

3.5 mm

Trade Compliance

LMX2335LSLBX Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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