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LMV712IDGSTG4

Texas Instruments

LMV712IDGSTG4 by Texas Instruments

LMV712IDGSTG4 by Texas Instruments is a dual operational amplifier with 3200uV max input offset voltage and 80dB nominal CMRR. Ideal for industrial applications, it operates at -40 to 85°C, has a unity gain bandwidth of 5000kHz, and consumes only 3.8mA max supply current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,933 parts In-Stock

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8,933

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Digiode

USA . 3,786 parts In-Stock

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EMSNET

USA . 240 parts In-Stock

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240

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,980 parts In-Stock

1+ parts

$3.441

100+ parts

-

1k+ parts

$3.967

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1,980

$3.441

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$3.967

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ChromeModa Solutions

Germany . 5,245 parts In-Stock

1+ parts

$3.866

100+ parts

$3.170

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5,245

$3.866

$3.170

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IDEA Electronic Components Group

UK . 1,414 parts In-Stock

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$3.866

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$3.479

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1,414

$3.866

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$3.479

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One Stop Electronics

USA . 1,288 parts In-Stock

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$4.410

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1,288

$4.410

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AZTECH Wire

Italy . 835 parts In-Stock

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$17.892

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835

$17.892

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Component Stockers USA

USA . 308 parts In-Stock

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$99.990

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308

$99.990

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Kepictronics

USA . 6,570 parts In-Stock

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Corphita

USA . 4,166 parts In-Stock

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Microchip USA

USA . 440 parts In-Stock

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A-Z Elektronik GmbH

Germany . 218 parts In-Stock

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DigiPath Technology Company

USA . 128 parts In-Stock

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$3.486

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128

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$3.486

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Overview

The LMV712IDGSTG4 by Texas Instruments is a top-quality operational amplifier that offers precision and reliability for a wide range of applications. With Texas Instruments' reputation for excellence in semiconductor manufacturing, customers can trust in the performance and durability of this product. Ideal for use in industrial settings, the LMV712IDGSTG4 provides superior voltage feedback and low-bias operation, making it a valuable asset for engineers seeking high-performance amplification solutions. Experience the benefits of cutting-edge technology and unmatched quality with the LMV712IDGSTG4 from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 3200 uV

Low input offset voltage helps to minimize errors in signal processing, making the amplifier more accurate and reliable.

Maximum Average Bias Current (IIB): 0.00013 uA

Low bias current helps in maintaining stability and precision in signal amplification, especially in low-power applications.

Surface Mount: YES

Surface mount design allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing noise and interference from external sources, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Suitable supply voltage for a wide range of applications, ensuring compatibility and ease of use.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the operational amplifier, improving overall performance.

Nominal Unity Gain Bandwidth: 5000 kHz

High unity gain bandwidth allows for a wide range of frequency response, making this operational amplifier suitable for various signal processing applications.

Technology: BICMOS

BICMOS technology combines the benefits of both bipolar and CMOS technologies, providing high speed and low power consumption for efficient operation.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for precision signal processing, amplification, and filtering applications.

Technical Specifications

Operational Amplifiers (Op Amps) LMV712IDGSTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3200 uV

Minimum Voltage Gain:

6300

Nominal Slew Rate:

5 V/us

Peak Bias Current:

130 pA

Maximum Bias Current (IIB) @25 °C:

115 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3.8 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

LMV712IDGSTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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