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LMH6321TSX

Texas Instruments

LMH6321TSX by Texas Instruments

LMH6321TSX by Texas Instruments is a buffer amplifier with a max bandwidth of 110MHz, ideal for automotive applications. It operates at temperatures ranging from -40 to 125°C and has a low bias current of 17uA. With a compact small outline package, it is suitable for surface mount designs in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,363 parts In-Stock

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Digiode

USA . 4,859 parts In-Stock

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4,859

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Anansix

USA . 2,789 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 345 parts In-Stock

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$2.410

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345

$2.410

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Parana Technologies

USA . 1,854 parts In-Stock

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$3.800

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$4.290

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$3.800

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DigiPath Technology Company

USA . 2,039 parts In-Stock

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$4.185

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2,039

$4.185

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ChromeModa Solutions

Germany . 3,490 parts In-Stock

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$4.270

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$3.501

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3,490

$4.270

$3.501

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IDEA Electronic Components Group

UK . 2,293 parts In-Stock

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$4.270

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$3.843

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$4.270

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AZTECH Wire

Italy . 664 parts In-Stock

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$10.165

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Corphita

USA . 778 parts In-Stock

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Microchip USA

USA . 117 parts In-Stock

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Overview

Experience unparalleled performance with the LMH6321TSX by Texas Instruments, a cutting-edge Buffer Amplifier designed to meet the highest standards of quality and reliability. With Texas Instruments' renowned reputation for innovation in semiconductor technology, this product offers exceptional value and benefits across a wide range of applications. From audio systems to industrial automation, the LMH6321TSX delivers superior amplification, precise signal processing, and unmatched efficiency. Elevate your projects with this versatile solution, where quality meets innovation seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Maximum Input Offset Voltage: 52000 uV

The high maximum input offset voltage allows for accurate signal amplification and minimal distortion.

Maximum Average Bias Current (IIB): 17 uA

With a low bias current, the product offers efficient performance and reduces power consumption.

Surface Mount: YES

Being surface mountable simplifies the installation process and saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures consistent and reliable operation of the buffer amplifier.

Power Supplies (V): +-5/+-15

The dual power supply options provide flexibility in different operating environments.

Nominal Bandwidth (3dB): 110 MHz

With a high nominal bandwidth, the buffer amplifier can handle a wide range of frequencies effectively.

Technical Specifications

Buffer Amplifiers LMH6321TSX attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

±5/±15 V

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

110 MHz

Nominal Slew Rate:

2900 V/us

Input Offset Voltage Limit:

52 mV

Peak Bias Current:

17 uA

Maximum Bias Current (IIB) @25 °C:

17 uA

Operational Characteristics

Maximum Supply Current:

20.5 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Output Current:

300 mA

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

20 s

Peak Reflow Temperature:

235 °C (455 °F)

Physical Characteristics

Length:

0.4 in (10.16 mm)

Width:

0.34 in (8.64 mm)

Maximum Seated Height:

0.189 in (4.79 mm)

Total Terminals:

7

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Single

Terminal Style:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PSSO-G7

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SMSIP7H,.55,50TB

Trade Compliance

LMH6321TSX Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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