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LM9061MX

Texas Instruments

LM9061MX by Texas Instruments

LM9061MX by Texas Instruments is a MOSFET gate driver with a max supply voltage of 26V and turn-on time of 1500µs. Ideal for automotive applications, it features a small outline package style, high side driver capability, and an operating temperature range from -40°C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,734 parts In-Stock

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8,734

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Chip Stock

USA . 4,399 parts In-Stock

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4,399

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Anansix

USA . 1,886 parts In-Stock

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1,886

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Digiode

USA . 989 parts In-Stock

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989

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Parana Technologies

USA . 1,173 parts In-Stock

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$12.533

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$12.983

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1,173

$12.533

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$12.983

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ChromeModa Solutions

Germany . 6,870 parts In-Stock

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$14.082

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$11.547

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6,870

$14.082

$11.547

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IDEA Electronic Components Group

UK . 113 parts In-Stock

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$14.082

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$13.378

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$12.674

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113

$14.082

$13.378

$12.674

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AZTECH Wire

Italy . 535 parts In-Stock

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$19.030

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535

$19.030

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One Stop Electronics

USA . 327 parts In-Stock

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$44.500

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327

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A-Z Elektronik GmbH

Germany . 6,245 parts In-Stock

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Corphita

USA . 4,466 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,163 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Assy Fe

Spain . 3,880 parts In-Stock

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Microchip USA

USA . 3,057 parts In-Stock

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3,057

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DigiPath Technology Company

USA . 1,916 parts In-Stock

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$12.696

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$12.696

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Kepictronics

USA . 285 parts In-Stock

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285

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Overview

Experience superior performance and reliability with the LM9061MX MOSFET Gate Driver from Texas Instruments. Designed for automotive applications, this small outline driver offers a wide supply voltage range, high side driver capability, and fast turn-on/off times. Benefit from Texas Instruments' renowned quality and expertise in semiconductor manufacturing, ensuring your projects run smoothly and efficiently. Upgrade your designs with the LM9061MX and unlock the full potential of your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and space are crucial factors.

Surface Mount: YES

With the ability to be surface mounted, the product can be easily integrated into compact electronic designs, saving space and providing flexibility in placement.

Maximum Supply Voltage: 26 V

The high maximum supply voltage of 26V allows for reliable operation in a wide range of voltage environments, ensuring versatility and compatibility with various systems.

Package Shape: RECTANGULAR

The rectangular package shape offers easy handling and installation, making it convenient for assembly and integration into electronic circuits.

Power Supplies (V): 7/20

The product supports a range of power supply voltages (7V to 20V), providing flexibility and compatibility with different power sources.

No. of Terminals: 8

With 8 terminals, the product offers comprehensive connectivity options, allowing for easy interfacing with other components and circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and provides a compact form factor, suitable for applications where size constraints are a concern.

Minimum Supply Voltage: 7 V

The low minimum supply voltage of 7V ensures efficient operation even in low-power scenarios, enhancing the product's versatility and performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the product can withstand extreme temperature conditions, making it suitable for a wide range of environments.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C ensures reliable performance in cold environments, improving the product's overall durability and usability.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers excellent solderability and connectivity, ensuring secure and reliable connections in electronic circuits.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and connection options, allowing for easy integration into various circuit layouts.

Maximum Seated Height: 1.75 mm

The low seated height of 1.75mm reduces the overall profile of the product, contributing to a compact design and facilitating assembly in tight spaces.

Width: 3.9 mm

The slim width of 3.9mm makes the product suitable for applications where space is limited, offering a compact and efficient solution for electronic designs.

High Side Driver: YES

The inclusion of a high side driver allows for easy and efficient control of high-side MOSFETs, enabling versatile and reliable operation in various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 20

The maximum time at peak reflow temperature of 20 seconds ensures proper soldering and reflow processes, maintaining the product's structural integrity and performance.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature of 235°C, the product can withstand the heat stress during soldering processes, ensuring a secure and reliable connection.

Length: 4.9 mm

The compact length of 4.9mm contributes to the overall small form factor of the product, facilitating installation and integration into space-constrained electronic systems.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating ensures that the product can withstand the demanding thermal conditions in automotive applications, ensuring reliability and longevity.

Technology: BIMOS

The use of BIMOS technology combines the advantages of bipolar and MOSFET transistors, offering high efficiency, speed, and reliability in driving MOSFETs.

Terminal Form: GULL WING

The gull wing terminal form provides a reliable and robust connection, ensuring secure contact and minimal risk of detachment in various operating conditions.

Nominal Supply Voltage: 14 V

The nominal supply voltage of 14V provides a stable power source for the product, ensuring consistent and reliable performance in various applications.

Turn-on Time: 1500 us

The fast turn-on time of 1500 microseconds enables quick activation of the MOSFETs, allowing for precise and responsive control in dynamic electronic systems.

Terminal Pitch: 1.27 mm

The small terminal pitch of 1.27mm facilitates easy and precise soldering, ensuring secure connections and reliable performance in electronic circuits.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The interface IC type offers buffer or inverter-based MOSFET driver functionality, providing flexibility and compatibility with different control signals and circuit configurations.

Turn-off Time: 10000 us

The extended turn-off time of 10000 microseconds allows for controlled and smooth deactivation of the MOSFETs, ensuring efficient operation and reducing the risk of voltage spikes.

Technical Specifications

MOSFET Gate Drivers LM9061MX attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

7/20

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

26 V

Minimum Supply Voltage:

7 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BIMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Turn-off Time:

10000 us

Turn-on Time:

1500 us

Width:

3.9 mm

Trade Compliance

LM9061MX Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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