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LM8365BALMF45

Texas Instruments

LM8365BALMF45 by Texas Instruments

LM8365BALMF45 by Texas Instruments is a Power Management IC with 5 terminals, operating b/w -40 to 85°C. It has a supply voltage range of 1-6V and nominal threshold voltage of +4.5V, suitable for industrial applications requiring low profile packaging in plastic/epoxy material.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,154 parts In-Stock

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Digiode

USA . 1,822 parts In-Stock

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Semi Source

USA . 1,680 parts In-Stock

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PC Components Company LLC

USA . 1,660 parts In-Stock

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Bristol Electronics

USA . 1,660 parts In-Stock

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Anansix

USA . 903 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Parana Technologies

USA . 334 parts In-Stock

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$3.191

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$3.713

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$3.191

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Ampacity Inc.

Singapore . 962 parts In-Stock

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$3.500

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ChromeModa Solutions

Germany . 3,984 parts In-Stock

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$3.585

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$2.940

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IDEA Electronic Components Group

UK . 2,299 parts In-Stock

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One Stop Electronics

USA . 130 parts In-Stock

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AZTECH Wire

Italy . 664 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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$18.290

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$16.481

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A-Z Elektronik GmbH

Germany . 6,882 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Alle Elektronik GmbH

Germany . 4,588 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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DigiPath Technology Company

USA . 834 parts In-Stock

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Aranea Global

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Overview

Unlock the power of efficient energy management with the LM8365BALMF45 by Texas Instruments. Crafted with precision and expertise, this Power Management IC promises reliable performance in a compact package. Suitable for a wide range of applications, this innovative product ensures optimal power supply support with industrial-grade temperature resilience. Say goodbye to worries about voltage thresholds and operating temperatures - invest in the LM8365BALMF45 for seamless power management solutions that deliver unmatched value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in power management ICs for its durability and reliability.

Surface Mount: YES

Surface mount technology allows for easier installation and space-saving design.

Nominal Supply Voltage (Vsup): 1.5 V

This specific voltage requirement ensures compatibility with various devices and systems.

No. of Terminals: 5

The number of terminals is optimized for the required connections, reducing complexity and potential errors.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance in various environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for usage in extreme cold conditions.

Width (mm): 1.6 mm

The compact width of the package makes it suitable for space-constrained applications.

Minimum Supply Voltage (Vsup): 1 V

The low minimum supply voltage allows for efficient power management in low-power devices.

Nominal Threshold Voltage (V): +4.5V

The specific threshold voltage ensures proper voltage regulation for connected devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade makes this IC suitable for rugged applications and harsh environments.

Technical Specifications

Power Management ICs LM8365BALMF45 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

DETECT THRESHOLD VOLTAGE IS 4.5V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

Length:

2.92 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

1 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.953 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.5V

Width (mm):

1.6 mm

Trade Compliance

LM8365BALMF45 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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