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LM6325N

Texas Instruments

LM6325N by Texas Instruments

LM6325N by Texas Instruments is a BUFFER amplifier with 50MHz bandwidth, 100000uV max input offset voltage, and 7uA max average bias current. It is used in commercial applications for signal buffering and amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,826 parts In-Stock

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Digiode

USA . 5,081 parts In-Stock

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5,081

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Anansix

USA . 529 parts In-Stock

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529

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LittleDiode

UK . 21 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 890 parts In-Stock

1+ parts

$4.728

100+ parts

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$5.223

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890

$4.728

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$5.223

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DigiPath Technology Company

USA . 342 parts In-Stock

1+ parts

$5.206

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342

$5.206

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ChromeModa Solutions

Germany . 4,176 parts In-Stock

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$5.312

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$4.356

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$5.312

$4.356

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IDEA Electronic Components Group

UK . 2,094 parts In-Stock

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$5.312

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$4.781

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2,094

$5.312

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$4.781

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One Stop Electronics

USA . 1,171 parts In-Stock

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$9.410

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$9.410

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AZTECH Wire

Italy . 410 parts In-Stock

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$11.188

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410

$11.188

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Corphita

USA . 5,033 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,260 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the LM6325N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality buffer amplifiers that are versatile and highly efficient. Ideal for a wide range of applications, this product offers exceptional value and benefits to customers seeking precision and accuracy in their electronic devices. Trust Texas Instruments to provide you with the best solutions for your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protects the internal components of the buffer amplifier, making it ideal for long-term use in various electronic applications.

Maximum Input Offset Voltage: 100000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output signal, making this buffer amplifier suitable for precision measurement and control systems.

Maximum Average Bias Current (IIB): 7 uA

Low average bias current reduces power consumption and thermal effects in the buffer amplifier, leading to improved efficiency and stability in the overall circuit design.

Nominal Bandwidth (3dB): 50 MHz

With a high nominal bandwidth of 50 MHz, this buffer amplifier can handle fast signal processing and deliver high-frequency performance, making it suitable for applications requiring rapid data transmission.

Maximum Supply Voltage Limit: 18 V

High maximum supply voltage limit allows the buffer amplifier to operate in a wide range of power supply configurations, increasing its versatility and compatibility with various electronics systems.

Technical Specifications

Buffer Amplifiers LM6325N attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Slew Rate:

50 V/us

Input Offset Voltage Limit:

100 mV

Peak Bias Current:

7 uA

Operational Characteristics

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Physical Characteristics

Length:

0.755 in (19.18 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDIP-T14

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Trade Compliance

LM6325N Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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