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BUF602IDBVRG4

Texas Instruments

BUF602IDBVRG4 by Texas Instruments

BUF602IDBVRG4 by Texas Instruments is a buffer amplifier with 38000uV max input offset voltage, 8.5uA max average bias current, and 5000 V/us min slew rate. Ideal for applications requiring low-profile amplification in compact spaces due to its small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,346 parts In-Stock

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6,346

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VNN

France . 5,707 parts In-Stock

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5,707

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Digiode

USA . 4,205 parts In-Stock

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4,205

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,986 parts In-Stock

1+ parts

$1.622

100+ parts

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$2.246

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1,986

$1.622

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$2.246

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ChromeModa Solutions

Germany . 3,661 parts In-Stock

1+ parts

$1.823

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$1.495

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3,661

$1.823

$1.495

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IDEA Electronic Components Group

UK . 124 parts In-Stock

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$1.823

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$1.641

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124

$1.823

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$1.641

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Ampacity Inc.

Singapore . 1,574 parts In-Stock

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$3.410

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$3.410

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One Stop Electronics

USA . 1,330 parts In-Stock

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$7.410

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$7.410

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AZTECH Wire

Italy . 602 parts In-Stock

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$15.077

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602

$15.077

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Continental Prestige Electronics

USA . 4,678 parts In-Stock

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Corphita

USA . 3,746 parts In-Stock

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DigiPath Technology Company

USA . 829 parts In-Stock

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$1.644

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829

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$1.644

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Argo Parts USA

USA . 567 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Kepictronics

USA . 400 parts In-Stock

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Overview

Enhance your electronic designs with the BUF602IDBVRG4 from Texas Instruments, a top-notch manufacturer known for its quality products. As a buffer amplifier, this component offers impeccable performance and reliability in various applications. With a sleek rectangular shape and small outline, this amplifier is a versatile solution for your circuit needs. Benefit from its low profile design, high slew rate, and wide operating temperature range, all while enjoying the peace of mind that comes with Texas Instruments' reputation for excellence. Elevate your projects with the BUF602IDBVRG4 and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for long-lasting use.

Maximum Input Offset Voltage: 38000 uV

Ensures precise signal processing.

Maximum Average Bias Current (IIB): 8.5 uA

Low bias current for accurate amplification.

Surface Mount: YES

Easy installation on circuit boards.

Package Shape: RECTANGULAR

Compact design for space-saving installation.

Nominal Supply Voltage / Vsup (V): 5

Stable power supply for consistent performance.

No. of Terminals: 5

Simplifies connection to external components.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Ideal for compact electronic devices.

Minimum Slew Rate: 5000 V/us

Fast response time for dynamic signals.

Maximum Supply Voltage Limit: 6.5 V

Protects against voltage spikes.

Maximum Operating Temperature: 85 °C

Suitable for various environmental conditions.

Maximum Bias Current (IIB) @25°C: 3 uA

Low current consumption for efficient operation.

Minimum Operating Temperature: -40 °C

Can function in low-temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Corrosion-resistant finish for reliability.

Terminal Position: DUAL

Flexible terminal configuration.

Maximum Seated Height: 1.45 mm

Slim profile for compact designs.

Width: 1.6 mm

Space-efficient component.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes.

Length: 2.9 mm

Compact size for tight spaces.

Maximum Negative Supply Voltage Limit: -6.5 V

Supports dual power supply configurations.

Terminal Form: GULL WING

Secure terminal connections.

Amplifier Type: BUFFER

Amplifies and maintains signal integrity.

Maximum Supply Current: 7.2 mA

Low power consumption for efficiency.

Nominal Negative Supply Voltage (Vsup): -5 V

Supports negative power supply requirements.

Packing Method: TR

Convenient packaging for storage and shipping.

Terminal Pitch: 0.95 mm

Standard pitch for compatibility.

Moisture Sensitivity Level (MSL): 2

Resistant to moisture damage.

Minimum Output Current: 48 A

Capable of driving high-current loads.

Technical Specifications

Buffer Amplifiers BUF602IDBVRG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Minimum Slew Rate:

5000 V/us

Input Offset Voltage Limit:

38 mV

Peak Bias Current:

8.5 uA

Maximum Bias Current (IIB) @25 °C:

3 uA

Operational Characteristics

Maximum Supply Current:

7.2 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6.5 V

Nominal Negative Supply Voltage (Vsup):

-5 V

Maximum Negative Supply Voltage:

-6.5 V

Lowest Output Current:

48 A

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

BUF602IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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