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LM6221N

Texas Instruments

LM6221N by Texas Instruments

LM6221N by Texas Instruments is a buffer amplifier with a 50 MHz bandwidth, ideal for industrial applications. It features a max input offset voltage of 60 mV and a max average bias current of 7 µA. With a package style of IN-LINE and an operating temperature range from -40 to 85°C, it offers reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,815 parts In-Stock

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Digiode

USA . 2,470 parts In-Stock

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2,470

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Anansix

USA . 2,063 parts In-Stock

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R&J Components

USA . 79 parts In-Stock

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Bristol Electronics

USA . 10 parts In-Stock

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Parana Technologies

USA . 1,645 parts In-Stock

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$0.809

100+ parts

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$1.785

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$0.809

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$1.785

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ChromeModa Solutions

Germany . 6,327 parts In-Stock

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$0.909

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$0.745

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$0.909

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IDEA Electronic Components Group

UK . 1,773 parts In-Stock

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$0.909

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$0.818

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One Stop Electronics

USA . 1,270 parts In-Stock

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$3.410

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$3.410

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AZTECH Wire

Italy . 753 parts In-Stock

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$5.434

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Alle Elektronik GmbH

Germany . 1,480 parts In-Stock

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Perfect Parts

USA . 954 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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Corphita

USA . 452 parts In-Stock

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DigiPath Technology Company

USA . 69 parts In-Stock

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$0.820

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$0.820

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Overview

Boost your electronic designs with the LM6221N Buffer Amplifier from Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a wide range of applications. The LM6221N offers customers exceptional value with its low input offset voltage and minimal bias current, providing precise signal buffering. Whether you're working on industrial equipment or audio systems, this amplifier's wide bandwidth and industrial temperature grade ensure optimal performance in any environment. Upgrade your projects today with the LM6221N from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the buffer amplifier.

Maximum Input Offset Voltage: 60000 uV

The high maximum input offset voltage ensures accurate signal amplification without significant distortion.

Maximum Average Bias Current (IIB): 7 uA

Low bias current helps in maintaining signal integrity and minimizing power consumption.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V is in the common range for buffer amplifiers, making it compatible with various setups.

Nominal Bandwidth (3dB): 50 MHz

With a high bandwidth of 50 MHz, this buffer amplifier is capable of processing high-frequency signals accurately.

Maximum Seated Height: 5.08 mm

The compact size of the buffer amplifier makes it suitable for applications where space is limited.

Temperature Grade: INDUSTRIAL

The buffer amplifier is designed to withstand industrial operating conditions, making it reliable in harsh environments.

Technical Specifications

Buffer Amplifiers LM6221N attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

50 MHz

Nominal Slew Rate:

800 V/us

Input Offset Voltage Limit:

60 mV

Peak Bias Current:

7 uA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.386 in (9.817 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDIP-T8

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Trade Compliance

LM6221N Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-379-9741, 5962013799741

NIIN

013799741

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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