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LM6171BIM

Texas Instruments

LM6171BIM by Texas Instruments

VIDEO AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Median Price

$5.013

Lifecycle Status

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19

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1k+

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Mouser Electronics

USA . 27 parts In-Stock

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$7.710

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$5.770

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$5.510

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DigiKey

USA . 1,305 parts In-Stock

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Rochester

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Verical

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Nova Conductors

Japan . 20 parts In-Stock

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Digiode

USA . 3,532 parts In-Stock

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DigiKey Marketplace

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Vyrian

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LWI Electronics Inc

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J & M Industries LLC

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Semi Source

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Beltway Electronics Company

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Bristol Electronics

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Atlantic Semiconductor

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EMSNET

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First Choice Components Inc.

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MISTER SPROCKETS

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Parana Technologies

USA . 876 parts In-Stock

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$0.328

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$1.557

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DigiPath Technology Company

USA . 715 parts In-Stock

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$0.361

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$0.332

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ChromeModa Solutions

Germany . 6,108 parts In-Stock

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IDEA Electronic Components Group

UK . 1,218 parts In-Stock

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Ampacity Inc.

Singapore . 588 parts In-Stock

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Semicontronic

India . 368 parts In-Stock

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Continental Prestige Electronics

USA . 3,532 parts In-Stock

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Netroflash

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Corphita

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Microchip USA

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Authorized Procurement Solutions

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Alle Elektronik GmbH

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Component Stockers USA

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Perfect Parts

USA . 1,538 parts In-Stock

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Futuretech Components

Singapore . 935 parts In-Stock

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Technical Specifications

Audio & Video Amplifiers LM6171BIM attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

130 kHz

General IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.753 mm

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage (Vsup):

17 V

Minimum Supply Voltage (Vsup):

2.75 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

LM6171BIM General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-518-0431, 5962015180431

NIIN

015180431

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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