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LM3900DRG4

Texas Instruments

LM3900DRG4 by Texas Instruments

LM3900DRG4 by Texas Instruments is a quad operational amplifier with 4 functions, featuring a max supply voltage of 36V and a nominal unity gain bandwidth of 2500 kHz. With low bias current of 0.2uA, it's ideal for applications requiring high voltage amplification in commercial temperature environments. The package style is small outline (SO) with gull wing terminals for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,581 parts In-Stock

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4,581

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Digiode

USA . 705 parts In-Stock

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705

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,566 parts In-Stock

1+ parts

$4.917

100+ parts

-

1k+ parts

$5.449

10k+ parts

-

1,566

$4.917

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$5.449

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ChromeModa Solutions

Germany . 5,353 parts In-Stock

1+ parts

$5.525

100+ parts

$4.530

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5,353

$5.525

$4.530

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IDEA Electronic Components Group

UK . 1,189 parts In-Stock

1+ parts

$5.525

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$4.972

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1,189

$5.525

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$4.972

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One Stop Electronics

USA . 1,524 parts In-Stock

1+ parts

$9.410

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1,524

$9.410

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AZTECH Wire

Italy . 769 parts In-Stock

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$9.710

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769

$9.710

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Corphita

USA . 1,877 parts In-Stock

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1,877

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DigiPath Technology Company

USA . 195 parts In-Stock

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$4.981

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195

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$4.981

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Overview

Unleash the power of precision and reliability with the LM3900DRG4 by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers top-notch quality with this versatile product. With a wide range of applications in audio equipment, instrumentation, and signal processing, this operational amplifier offers customers unmatched value and performance. Experience seamless operation and enhanced functionality with the LM3900DRG4, where precision meets perfection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the operational amplifier, making it suitable for various operating environments.

Maximum Average Bias Current (IIB): 0.2 uA

Low bias current ensures minimal power consumption and accurate signal processing, making the amplifier efficient and reliable.

Surface Mount: YES

Allows for easy and space-saving installation on PCBs, making it convenient for circuit design and assembly.

Nominal Supply Voltage / Vsup (V): 15

Suitable voltage supply for the amplifier to operate efficiently and provide stable performance within the specified range.

Maximum Operating Temperature: 70 °C

Can withstand high temperature conditions, ensuring reliable operation even in demanding environments.

Minimum Voltage Gain: 1200

High voltage gain capability allows for amplification of small signals with minimal distortion, making it ideal for precision applications.

Nominal Unity Gain Bandwidth: 2500 kHz

Provides high-frequency response for accurate signal processing, making it suitable for applications requiring fast signal amplification.

Technology: BIPOLAR

Bipolar technology offers good linearity and low noise performance, ensuring high-quality signal amplification for various applications.

Technical Specifications

Operational Amplifiers (Op Amps) LM3900DRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±2.25/±16/4.5/32 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.5 MHz

Minimum Voltage Gain:

1200

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

10 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LM3900DRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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