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LM3900DRE4

Texas Instruments

LM3900DRE4 by Texas Instruments

LM3900DRE4 by Texas Instruments is an Operational Amplifier with 4 functions, Vsup of 15V, and IIB of 0.2uA. Ideal for applications requiring low bias current, such as precision instrumentation and sensor signal conditioning. Features include a unity gain bandwidth of 2500 kHz and voltage-feedback architecture.

Median Price

$4.418

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$4.418

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870

$4.418

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Digiode

USA . 4,267 parts In-Stock

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4,267

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Vyrian

USA . 3,819 parts In-Stock

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3,819

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 481 parts In-Stock

1+ parts

$1.965

100+ parts

-

1k+ parts

$2.498

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481

$1.965

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$2.498

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DigiPath Technology Company

USA . 1,337 parts In-Stock

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$2.164

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1,337

$2.164

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ChromeModa Solutions

Germany . 5,315 parts In-Stock

1+ parts

$2.208

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$1.811

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5,315

$2.208

$1.811

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IDEA Electronic Components Group

UK . 2,344 parts In-Stock

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$2.208

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$1.987

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2,344

$2.208

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$1.987

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One Stop Electronics

USA . 396 parts In-Stock

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$3.410

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396

$3.410

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AZTECH Wire

Italy . 308 parts In-Stock

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$18.738

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308

$18.738

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Corphita

USA . 3,205 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the LM3900DRE4 operational amplifier by Texas Instruments. Manufactured with precision and expertise, this versatile component offers reliable performance and exceptional quality. Ideal for a wide range of applications, this op amp provides superior amplification and voltage feedback, ensuring optimal functionality in your designs. Trust in Texas Instruments to deliver innovative solutions that will elevate your projects to the next level. Choose the LM3900DRE4 and experience the value and reliability that only a trusted manufacturer like Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes this product lightweight and durable.

Maximum Average Bias Current (IIB): 0.2 uA

With a low bias current, this operational amplifier is suitable for applications where low power consumption is important.

Surface Mount: YES

Being surface mount allows for easy and efficient assembly on circuit boards.

No. of Functions: 4

This operational amplifier offers multiple functions in one component, reducing the need for additional components in a circuit design.

Nominal Supply Voltage / Vsup (V): 15

This operational amplifier can operate efficiently at a nominal supply voltage of 15V.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in elevated temperature environments.

Frequency Compensation: YES

With frequency compensation, this operational amplifier provides stability and accuracy in frequency-dependent applications.

Nominal Unity Gain Bandwidth: 2500 kHz

The high nominal unity gain bandwidth of 2500 kHz enables this operational amplifier to handle high-frequency signals effectively.

Technology: BIPOLAR

Utilizing bipolar technology offers excellent performance characteristics, making this operational amplifier a reliable choice for various applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is suitable for a wide range of analog signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) LM3900DRE4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±2.25/±16/4.5/32 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.5 MHz

Minimum Voltage Gain:

1200

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

10 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

LM3900DRE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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