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LF198AL

Texas Instruments

LF198AL by Texas Instruments

LF198AL by Texas Instruments is a BIFET technology Sample & Hold IC with 8 terminals in a cylindrical package. It operates at temperatures from -55 to 125 °C and has a max supply voltage of +-18 V. Ideal for military-grade applications requiring fast acquisition times of 4-6 us.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,252 parts In-Stock

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Digiode

USA . 4,291 parts In-Stock

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4,291

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,859 parts In-Stock

1+ parts

$2.150

100+ parts

-

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$2.663

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1,859

$2.150

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$2.663

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DigiPath Technology Company

USA . 1,526 parts In-Stock

1+ parts

$2.368

100+ parts

$2.178

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1,526

$2.368

$2.178

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ChromeModa Solutions

Germany . 3,409 parts In-Stock

1+ parts

$2.416

100+ parts

$1.981

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3,409

$2.416

$1.981

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IDEA Electronic Components Group

UK . 446 parts In-Stock

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$2.416

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$2.174

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446

$2.416

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$2.174

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AZTECH Wire

Italy . 386 parts In-Stock

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$8.548

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386

$8.548

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One Stop Electronics

USA . 1,539 parts In-Stock

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$9.410

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1,539

$9.410

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Corphita

USA . 820 parts In-Stock

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820

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Overview

Unlock the power of precision with the LF198AL by Texas Instruments. Crafted with quality materials and cutting-edge technology, this Sample & Hold IC offers unparalleled performance and reliability. Ideal for a wide range of applications, this versatile component is designed to deliver seamless operation and consistent results. Experience the value and benefits of Texas Instruments' expertise in every circuit with the LF198AL. Elevate your projects with this high-quality solution that guarantees superior outcomes every time.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and better heat dissipation, ensuring reliable performance in various operating conditions.

Nominal Supply Voltage / Vsup (V): 15

An ideal supply voltage of 15V allows for stable operation and efficient power management in the circuit.

Maximum Acquisition Time: 6 us

With a fast acquisition time of 6 microseconds, this sample and hold IC enables accurate sampling and precise control of analog signals.

Technology: BIFET

The BIFET technology combines the advantages of bipolar and CMOS components, offering low noise, high input impedance, and improved linearity for superior signal processing.

Amplifier Type: SAMPLE AND HOLD CIRCUIT

The sample and hold circuit design ensures the captured analog signal is retained accurately until the next sampling cycle, maintaining signal integrity and minimizing distortion.

Technical Specifications

Sample & Hold ICs LF198AL attributes and parameters. Explore more Sample & Hold ICs devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Bi-FET

Power Supply Voltage Ratings:

±15 V

Total Functions:

1

Sub-Category:

Sample and Hold Circuits

Sampling Mode:

Sample and Hold (S&H)

Performance Specifications

Nominal Acquisition Time:

4 µs

Maximum Acquisition Time:

6 µs

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

-15 V

Minimum Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

5.5 mA

Physical Characteristics

Total Terminals:

8

Terminal Position:

Bottom

Terminal Form:

Package Body Material:

Metal

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

O-MBCY-W8

Packaging and Shipping

Package Code:

Package Shape:

Package Style (Meter):

Cylindrical

Package Equivalence Code:

CAN8,.2

Trade Compliance

LF198AL Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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