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ISO130U

Texas Instruments

ISO130U by Texas Instruments

ISO130U by Texas Instruments is an Isolation Amplifier with 5V nominal voltage, 3750V min isolation voltage, and 15.5mA max supply current. It is used in industrial applications requiring high common mode voltage tolerance and operates within -40 to 85 °C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,427 parts In-Stock

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4,427

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Vyrian

USA . 3,981 parts In-Stock

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3,981

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,578 parts In-Stock

1+ parts

$4.410

100+ parts

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1,578

$4.410

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Parana Technologies

USA . 7 parts In-Stock

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$4.737

100+ parts

-

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$5.235

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7

$4.737

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$5.235

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AZTECH Wire

Italy . 293 parts In-Stock

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$4.994

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293

$4.994

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DigiPath Technology Company

USA . 1,641 parts In-Stock

1+ parts

$5.217

100+ parts

$4.799

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1,641

$5.217

$4.799

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ChromeModa Solutions

Germany . 2,636 parts In-Stock

1+ parts

$5.323

100+ parts

$4.365

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2,636

$5.323

$4.365

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IDEA Electronic Components Group

UK . 652 parts In-Stock

1+ parts

$5.323

100+ parts

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$4.791

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652

$5.323

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$4.791

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Corphita

USA . 5,612 parts In-Stock

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5,612

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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Overview

Experience unmatched quality and reliability with the Texas Instruments ISO130U Isolation Amplifier. Designed to meet the highest standards of performance, this product offers precise signal isolation for a wide range of industrial applications. With a maximum isolation voltage of 3750V and a compact, durable design, the ISO130U ensures safety and accuracy in your systems. Trust in Texas Instruments' expertise and elevate your projects with the superior technology of the ISO130U.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable for long-term usage.

Nominal Supply Voltage / Vsup (V): 5

This product operates efficiently at a standard voltage of 5V, making it compatible with various systems.

Maximum Isolation Voltage: 3750 V

With a high minimum isolation voltage of 3750V, this isolation amplifier provides excellent protection against voltage spikes and electrical interference.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance in various environmental conditions.

Technology: HYBRID

The hybrid technology used in this isolation amplifier combines the advantages of different technologies, resulting in improved overall performance.

Technical Specifications

Isolation Amplifiers ISO130U attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

Hybrid

Power Supply:

5 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Maximum Common Mode Voltage:

2.6 V

Minimum Voltage Gain:

7.61

Maximum Voltage Gain:

8.4

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

15.5 mA

Minimum Isolation Voltage:

3.75 KV

Physical Characteristics

Length:

0.38 in (9.655 mm)

Width:

0.25 in (6.35 mm)

Maximum Seated Height:

0.185 in (4.7 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

GWDIP8,.4

Trade Compliance

ISO130U Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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