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ISO120SGQ

Texas Instruments

ISO120SGQ by Texas Instruments

ISO120SGQ by Texas Instruments is an isolation amplifier with 60 MHz bandwidth, 1500 V isolation voltage, and MILITARY temperature grade. It has a package style of IN-LINE and is ideal for applications requiring high common mode voltage tolerance in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,691 parts In-Stock

1+ parts

-

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3,691

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Vyrian

USA . 2,268 parts In-Stock

1+ parts

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-

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2,268

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,989 parts In-Stock

1+ parts

$4.646

100+ parts

-

1k+ parts

$5.122

10k+ parts

-

1,989

$4.646

-

$5.122

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ChromeModa Solutions

Germany . 2,473 parts In-Stock

1+ parts

$5.220

100+ parts

$4.280

1k+ parts

-

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2,473

$5.220

$4.280

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IDEA Electronic Components Group

UK . 802 parts In-Stock

1+ parts

$5.220

100+ parts

-

1k+ parts

$4.698

10k+ parts

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802

$5.220

-

$4.698

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One Stop Electronics

USA . 1,374 parts In-Stock

1+ parts

$6.410

100+ parts

-

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1,374

$6.410

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AZTECH Wire

Italy . 521 parts In-Stock

1+ parts

$13.832

100+ parts

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521

$13.832

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Corphita

USA . 2,110 parts In-Stock

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2,110

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DigiPath Technology Company

USA . 1,813 parts In-Stock

1+ parts

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100+ parts

$4.706

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1,813

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$4.706

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Overview

Discover the unparalleled quality and reliability of the Texas Instruments ISO120SGQ Isolation Amplifier. Designed with precision in mind, this product offers a wide range of applications in various industries. With its robust construction and advanced technology, customers can trust in the performance and durability of this amplifier. Experience peace of mind knowing that your systems are protected and optimized with the ISO120SGQ, providing exceptional value and benefits unmatched by other products in its category.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired body material ensures high reliability and durability, making this isolation amplifier suitable for harsh industrial environments.

Nominal Supply Voltage / Vsup (V): 15

Operates at a nominal supply voltage of 15V, providing a stable power source for consistent performance.

Maximum Common Mode Voltage: 1500 V

Offers high common mode voltage protection up to 1500V, ensuring safety and protection in high voltage applications.

Nominal Bandwidth (3dB): 60 MHz

With a high nominal bandwidth of 60 MHz, this isolation amplifier is capable of providing high-speed signal processing and accurate data transmission.

Temperature Grade: MILITARY

Designed to meet military-grade standards, ensuring reliable operation in extreme temperature conditions and harsh environments.

Technical Specifications

Isolation Amplifiers ISO120SGQ attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

60 MHz

Maximum Common Mode Voltage:

1.5 KV

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

12 mA

Minimum Isolation Voltage:

1.5 KV

Physical Characteristics

Length:

1.2 in (30.48 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.185 in (4.7 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP16/24,.3

Trade Compliance

ISO120SGQ Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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