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ISO103/2K5

Texas Instruments

ISO103/2K5 by Texas Instruments

ISO103/2K5 by Texas Instruments is an isolation amplifier with 1500V min isolation voltage. It operates b/w -25 to 85 °C, with a bandwidth of 20 MHz. Ideal for applications requiring high common mode voltage tolerance and precise signal amplification in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,616 parts In-Stock

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7,616

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Digiode

USA . 2,503 parts In-Stock

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2,503

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,868 parts In-Stock

1+ parts

$0.514

100+ parts

-

1k+ parts

$1.632

10k+ parts

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1,868

$0.514

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$1.632

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DigiPath Technology Company

USA . 1,075 parts In-Stock

1+ parts

$0.566

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1,075

$0.566

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ChromeModa Solutions

Germany . 6,449 parts In-Stock

1+ parts

$0.578

100+ parts

$0.474

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-

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6,449

$0.578

$0.474

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IDEA Electronic Components Group

UK . 307 parts In-Stock

1+ parts

$0.578

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-

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$0.520

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307

$0.578

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$0.520

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One Stop Electronics

USA . 1,507 parts In-Stock

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$8.410

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1,507

$8.410

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AZTECH Wire

Italy . 654 parts In-Stock

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$18.936

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654

$18.936

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Corphita

USA . 5,418 parts In-Stock

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Overview

Experience superior performance and reliability with the ISO103/2K5 isolation amplifier from Texas Instruments. Crafted with precision using high-quality ceramic and metal-sealed cofired materials, this rectangular package ensures durability and stability in any application. Whether you're in industrial automation or automotive electronics, the ISO103/2K5 offers exceptional isolation voltage, wide bandwidth, and optimal thermal performance. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and elevates your designs to the next level. Elevate your projects with the unmatched quality of the ISO103/2K5.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed cofired construction provides durability and reliability, ensuring long-term performance.

Nominal Supply Voltage / Vsup (V): 15

The 15V nominal supply voltage allows for versatile use in various applications requiring this specific voltage.

Maximum Common Mode Voltage: 1500 V

With a maximum common mode voltage of 1500V, this isolation amplifier can handle high levels of common mode signals without issues.

Nominal Bandwidth (3dB): 20 MHz

The 20 MHz nominal bandwidth allows for high-frequency signal processing, making this isolation amplifier suitable for applications requiring fast data transmission.

Minimum Isolation Voltage: 1500 V

The minimum isolation voltage of 1500V ensures effective isolation between input and output signals, making this product ideal for sensitive electronic systems.

Technical Specifications

Isolation Amplifiers ISO103/2K5 attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

20 MHz

Maximum Common Mode Voltage:

1.5 KV

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Minimum Isolation Voltage:

1.5 KV

Physical Characteristics

Length:

1.222 in (31.05 mm)

Width:

0.6 in (15.24 mm)

Maximum Seated Height:

0.375 in (9.52 mm)

Total Terminals:

16

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-CDIP-T16

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Trade Compliance

ISO103/2K5 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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