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3656BG

Texas Instruments

3656BG by Texas Instruments

The Texas Instruments 3656BG is an Isolation Amplifier with a nominal bandwidth of 30 MHz, operating at temperatures from -25 to 85 °C. It features a max common mode voltage of 2000 V and is ideal for applications requiring high isolation voltages and precise signal amplification in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 3,317 parts In-Stock

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Digiode

USA . 2,597 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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Sunrise Surplus Inc.

USA . 2 parts In-Stock

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Elcom Components

USA . 1 parts In-Stock

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Northwest PG Solutions

USA . 808 parts In-Stock

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$3.482

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808

$3.482

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Parana Technologies

USA . 1,574 parts In-Stock

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$4.715

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$437.880

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$4.244

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DigiPath Technology Company

USA . 1,310 parts In-Stock

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$5.192

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ChromeModa Solutions

Germany . 991 parts In-Stock

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$5.298

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$4.344

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$5.298

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IDEA Electronic Components Group

UK . 31 parts In-Stock

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$5.298

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$4.768

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One Stop Electronics

USA . 2,083 parts In-Stock

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$6.410

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AZTECH Wire

Italy . 281 parts In-Stock

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$16.514

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Component Stockers USA

USA . 323 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Assy Fe

Spain . 700 parts In-Stock

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Corphita

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Microchip USA

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Native Components

USA . 42 parts In-Stock

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Elevate your electronic designs with the Texas Instruments 3656BG Isolation Amplifier. Crafted with precision and expertise, this amplifier offers unparalleled quality and reliability that only a manufacturer like Texas Instruments can deliver. Ideal for applications that require precise signal isolation and amplification, the 3656BG provides customers with unbeatable value, exceptional performance, and peace of mind knowing they have a trusted product in their hands. Experience the difference with Texas Instruments and take your projects to the next level with the 3656BG Isolation Amplifier.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Ceramic and metal-sealed cofired package body materials provide excellent durability and resistance to harsh environments, making this isolation amplifier suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 15

With a nominal supply voltage of 15V, this isolation amplifier is compatible with standard power supplies, making it easy to integrate into existing systems.

Maximum Common Mode Voltage: 2000 V

The high maximum common mode voltage tolerance of 2000V ensures reliable performance in high voltage environments, making this isolation amplifier suitable for industrial and automotive applications.

Nominal Bandwidth (3dB): 30 MHz

With a wide nominal bandwidth of 30MHz, this isolation amplifier is capable of accurately amplifying high-frequency signals, making it ideal for data acquisition and measurement applications.

Minimum Isolation Voltage: 2000 V

The minimum isolation voltage of 2000V ensures effective isolation between input and output signals, providing protection against voltage spikes and interference, making this isolation amplifier a safe choice for sensitive circuits.

Technical Specifications

Isolation Amplifiers 3656BG attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

30 MHz

Maximum Common Mode Voltage:

2 KV

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

18 mA

Minimum Isolation Voltage:

2 KV

Physical Characteristics

Length:

1.1 in (27.94 mm)

Width:

0.9 in (22.86 mm)

Maximum Seated Height:

0.285 in (7.24 mm)

Total Terminals:

20

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-CDIP-P20

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP20,.9

Trade Compliance

3656BG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-135-3917, 5962011353917, 5962-01-467-9946, 5962014679946, 5962-01-613-9725, 5962016139725

NIIN

011353917, 014679946, 016139725

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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