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3656JG

Texas Instruments

3656JG by Texas Instruments

3656JG by Texas Instruments is an Isolation Amplifier with a bandwidth of 30 MHz, suitable for commercial applications. It operates at temperatures from 0 to 70 °C and has a common mode voltage of 2000 V. With a package size of 27.94mm x 22.86mm x 7.24mm, it features dual terminals and requires +-15V power supplies.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,294 parts In-Stock

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Vyrian

USA . 2,998 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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ComSIT USA

USA . 2 parts In-Stock

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Native Components

USA . 447 parts In-Stock

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$1.954

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447

$1.954

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Northwest PG Solutions

USA . 1,439 parts In-Stock

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$2.150

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Ampacity Inc.

Singapore . 1,158 parts In-Stock

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$4.410

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Parana Technologies

USA . 1,465 parts In-Stock

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$5.772

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$6.566

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AZTECH Wire

Italy . 750 parts In-Stock

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$5.842

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DigiPath Technology Company

USA . 2,188 parts In-Stock

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$6.355

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$5.847

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One Stop Electronics

USA . 2,620 parts In-Stock

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$6.410

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

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$6.485

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$5.836

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ChromeModa Solutions

Germany . 723 parts In-Stock

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$6.485

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$5.318

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Corphita

USA . 3,859 parts In-Stock

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Assy Fe

Spain . 500 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Experience unparalleled precision and reliability with the 3656JG Isolation Amplifier by industry leader Texas Instruments. Ideal for applications requiring high voltage protection, this ceramic and metal-sealed co-fired package ensures top-notch performance in a compact design. With a wide temperature range and exceptional common mode voltage capabilities, this amplifier delivers peace of mind in critical systems. Trust Texas Instruments for quality you can depend on.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures durability and reliability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V ensures compatibility with a wide range of power supplies, making it versatile for different applications.

Maximum Common Mode Voltage: 2000 V

The high maximum common mode voltage of 2000V provides excellent isolation and protection against external interference.

Nominal Bandwidth (3dB): 30 MHz

The high nominal bandwidth of 30 MHz allows for fast and accurate signal processing, making it suitable for high-frequency applications.

Minimum Isolation Voltage: 2000 V

The minimum isolation voltage of 2000V ensures safe operation and reliable isolation between input and output signals.

Technical Specifications

Isolation Amplifiers 3656JG attributes and parameters. Explore more Isolation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Isolation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

30 MHz

Maximum Common Mode Voltage:

2 KV

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

16 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Maximum Supply Current:

18 mA

Minimum Isolation Voltage:

2 KV

Physical Characteristics

Length:

1.1 in (27.94 mm)

Width:

0.9 in (22.86 mm)

Maximum Seated Height:

0.285 in (7.24 mm)

Total Terminals:

20

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-CDIP-P20

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP20,.9

Trade Compliance

3656JG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

NSN

5962-01-220-7285, 5962012207285

NIIN

012207285

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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