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DS3634N

Texas Instruments

DS3634N by Texas Instruments

DS3634N by Texas Instruments is a CMOS technology-based peripheral driver with 2 functions. It operates b/w 0-70°C, supports supply voltages of 4.75-15V, and has an output current limit of 0.3A. Ideal for applications requiring NOR gate based interface ICs with sink output flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 4,362 parts In-Stock

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Anansix

USA . 1,686 parts In-Stock

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Digiode

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Vectronix, Inc

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Sunrise Surplus Inc.

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Resion

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Benley Electronics

USA . 6 parts In-Stock

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$0.650

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Native Components

USA . 244 parts In-Stock

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$0.762

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Northwest PG Solutions

USA . 526 parts In-Stock

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$0.838

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Parana Technologies

USA . 1,889 parts In-Stock

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$7.087

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$7.615

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DigiPath Technology Company

USA . 194 parts In-Stock

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$7.804

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ChromeModa Solutions

Germany . 6,087 parts In-Stock

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$6.530

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IDEA Electronic Components Group

UK . 654 parts In-Stock

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AZTECH Wire

Italy . 293 parts In-Stock

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$14.031

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One Stop Electronics

USA . 1,604 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,474 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Overview

Experience the power of Texas Instruments with the DS3634N peripheral driver. Designed for optimal performance and reliability, this versatile component offers a multitude of applications in various industries. From automotive to industrial automation, the DS3634N provides exceptional value and benefits with its high-quality construction and advanced technology. Trust Texas Instruments to deliver top-notch products that exceed expectations and elevate your projects to new heights. Choose the DS3634N for unparalleled quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the internal components of the peripheral driver, making it suitable for long-term use in various environments.

Maximum Supply Voltage: 15 V

The high maximum supply voltage of 15V allows for compatibility with a wide range of power sources, providing flexibility in application scenarios.

No. of Functions: 2

Having 2 functions in a single peripheral driver allows for more versatile use and enables more complex operations to be performed efficiently.

Output Characteristics: OPEN-COLLECTOR

The open-collector output characteristics provide flexibility in connecting external components, allowing for customizability and integration with various types of devices.

Technology: CMOS

The CMOS technology used in this peripheral driver ensures low power consumption and high noise immunity, making it energy-efficient and reliable in operation.

Technical Specifications

Peripheral Drivers DS3634N attributes and parameters. Explore more Peripheral Drivers devices from Texas Instruments

Specs

Driver No. of Bits:

2

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Current Flow Direction:

SINK

Maximum Output Current:

.3 A

Nominal Output Peak Current Limit:

.3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Qualification:

Not Qualified

Sub-Category:

Peripheral Drivers

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

DS3634N Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-382-4736, 5962013824736

NIIN

013824736

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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