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DRV5032FBDBZT

Texas Instruments

DRV5032FBDBZT by Texas Instruments

DRV5032FBDBZT by Texas Instruments is a magnetic field sensor with hysteresis of 1.5 mT, operating temperature range of -40 to 85°C, and output current up to 5A. Ideal for applications requiring precise detection of magnetic fields in a compact rectangular package.

Median Price

$0.864

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1,963 parts In-Stock

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$1.180

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$0.741

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Mouser Electronics

USA . 17,678 parts In-Stock

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$0.549

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$0.494

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$0.494

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Nova Conductors

Japan . 150 parts In-Stock

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$0.451

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$0.451

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Digiode

USA . 2,797 parts In-Stock

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$1.188

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Chip Stock

USA . 189,458 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

France . 44 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.451

100+ parts

$0.442

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100

$0.451

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Ampacity Inc.

Singapore . 17,612 parts In-Stock

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$0.467

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Corphita

USA . 2,541 parts In-Stock

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$1.125

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Parana Technologies

USA . 1,819 parts In-Stock

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$1.901

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$2.439

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DigiPath Technology Company

USA . 1,803 parts In-Stock

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$2.093

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$1.926

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ChromeModa Solutions

Germany . 4,519 parts In-Stock

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$2.136

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$1.752

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IDEA Electronic Components Group

UK . 1,028 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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$3.493

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Lixinc

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Perfect Parts

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

Germany . 4,895 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,263 parts In-Stock

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Argo Parts USA

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Component Connect

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Kepictronics

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Continental Prestige Electronics

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Overview

Experience the precision and reliability of Texas Instruments with the DRV5032FBDBZT magnetic field sensor. Ideal for a range of applications, this sensor offers unparalleled performance and accuracy. From automotive to industrial use, this sensor provides value and benefits to customers by delivering precise measurements and dependable results. Trust in Texas Instruments for quality and innovation in magnetic field sensors.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the sensor, making it suitable for various environments.

Maximum Supply Voltage:

5.5 V - Allows for a wide range of power supply options, enhancing flexibility in applications.

Hysteresis:

1.5 mT - Offers precise and stable magnetic field measurements, ensuring accurate data output.

Body Width:

1.3 inch - Compact size makes it easy to integrate into different systems or devices.

Sensors or Transducers Type:

MAGNETIC FIELD SENSOR,HALL EFFECT - Utilizes advanced technology for reliable and efficient magnetic field detection.

Body Height:

1.12 mm - Low profile design enables installation in space-constrained areas.

Package Shape or Style:

RECTANGULAR - Provides a standardized form factor for easy compatibility with existing setups.

Minimum Supply Voltage:

1.65 V - Allows for operation in low power scenarios, increasing energy efficiency.

Maximum Operating Temperature:

85 °C - Can withstand high temperatures, making it suitable for industrial applications.

Output Range:

5.0-5.0mA - Provides a wide output range for versatile compatibility with different systems.

Output Type:

DIGITAL CURRENT - Delivers digital output for easy integration and data processing.

Minimum Operating Temperature:

40 °C - Capable of functioning in extreme cold environments without performance degradation.

Terminal Finish:

Matte Tin (Sn) - Ensures secure electrical connections for reliable performance.

Output (V):

OPEN-DRAIN - Suitable for applications requiring an open-drain output configuration.

Maximum Operating Current:

0.0018 mA - Consumes minimal power during operation, leading to energy efficiency.

Output Polarity:

COMPLEMENTARY - Offers dual polarity output for enhanced flexibility in system design.

Minimum Range Of Magnetic Field:

0.5 mT - Provides sensitivity to low magnetic field strengths, making it suitable for various applications.

Maximum Output Current:

5 A - Capable of delivering high current output for demanding applications.

Input Mode:

UNIPOLAR - Simplifies system design by requiring only one polarity of input signal.

Maximum Magnetic Field Range:

4.8 mT - Covers a wide range of magnetic field strengths for versatile applications.

Body Length/Diameter:

2.92 mm - Compact design for easy integration into small devices or systems.

Termination Type:

SOLDER - Allows for secure soldered connections for reliable performance.

Mounting Feature:

SURFACE MOUNT - Enables easy and convenient mounting on PCBs or other surfaces.

Technical Specifications

Magnetic Field Sensors DRV5032FBDBZT attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Body Width:

1.3 inch

Body Height:

1.12 mm

Body Length/Diameter:

2.92 mm

Hysteresis:

1.5 mT

Input Mode:

UNIPOLAR

JESD-609 Code:

e3

Maximum Magnetic Field Range:

4.8 mT

Minimum Range Of Magnetic Field:

.5 mT

Mounting Feature:

Maximum Operating Current:

.0018 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

OPEN-DRAIN

Maximum Output Current:

5 A

Output Polarity:

COMPLEMENTARY

Output Range:

Output Type:

Package Body Material:

PLASTIC/EPOXY

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

1.65 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Trade Compliance

DRV5032FBDBZT Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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