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DRV5013ADEDBZR

Texas Instruments

DRV5013ADEDBZR by Texas Instruments

DRV5013ADEDBZR by Texas Instruments is a magnetic field sensor with 38V max supply voltage, 5mT hysteresis, and -40 to 125°C operating temperature range. Ideal for applications requiring digital voltage output in a compact rectangular package.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,312 parts In-Stock

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Digiode

USA . 3,784 parts In-Stock

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Parana Technologies

USA . 2,220 parts In-Stock

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$2.779

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$3.262

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$2.779

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$3.262

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DigiPath Technology Company

USA . 870 parts In-Stock

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$3.060

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$2.815

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870

$3.060

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IDEA Electronic Components Group

UK . 1,006 parts In-Stock

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$3.122

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$2.810

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$3.122

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ChromeModa Solutions

Germany . 176 parts In-Stock

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$3.122

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$2.560

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AZTECH Wire

Italy . 529 parts In-Stock

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$5.251

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One Stop Electronics

USA . 338 parts In-Stock

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$5.750

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Native Components

USA . 35 parts In-Stock

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$8.796

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Northwest PG Solutions

USA . 881 parts In-Stock

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$9.676

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$8.708

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Ampacity Inc.

Singapore . 753 parts In-Stock

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$23.750

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Semicontronic

India . 1,075 parts In-Stock

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$39.750

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$38.756

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$38.558

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Lixinc

USA . 8,693 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,983 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,655 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Kepictronics

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Elevate your magnetic field sensing capabilities with the DRV5013ADEDBZR by Texas Instruments. Crafted with precision and expertise, this sensor offers unparalleled reliability and accuracy for a wide range of applications. From automotive to industrial, this sensor is designed to deliver optimal performance in any environment. With a maximum supply voltage of 38V and a hysteresis of 5mT, the DRV5013ADEDBZR ensures precise measurements every time. Experience the quality and innovation of Texas Instruments with this cutting-edge magnetic field sensor.

Feature Benefit Bullets

Maximum Supply Voltage: 38 V

Higher supply voltage allows for greater flexibility in the power source options, making this sensor suitable for a wider range of applications.

Hysteresis: 5 mT

Low hysteresis ensures accurate and reliable measurements, making this sensor ideal for precision applications.

Body Width: 1.3 inch

Compact size makes this sensor easy to integrate into various systems without taking up too much space.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR, HALL EFFECT

Utilizing Hall Effect technology ensures precise measurement of magnetic fields, making this sensor highly accurate and reliable.

Body Height: 1.005 mm

Low profile design allows for easy installation in tight spaces or on PCB boards with limited vertical clearance.

Package Shape or Style: RECTANGULAR

Rectangular shape is commonly used and easily mountable, making this sensor versatile and compatible with standard mounting configurations.

Minimum Supply Voltage: 2.5 V

Low minimum supply voltage requirement allows for operation in low power systems, enabling energy-efficient applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliability and functionality in harsh environmental conditions.

Output Range: 0-38V

Wide output range provides flexibility in signal processing and compatibility with various controller systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration with digital circuits, enhancing overall system efficiency.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

High-quality terminal finish ensures reliable electrical connections and long-term durability of the sensor.

Maximum Operating Current: 3.5 mA

Low operating current requirement minimizes power consumption, making this sensor energy-efficient and suitable for battery-powered devices.

Housing: PLASTIC

Durable plastic housing provides protection against external elements and mechanical impacts, increasing the sensor's lifespan.

Minimum Range Of Magnetic Field: -4 mT

Wide range of magnetic field measurement allows for detection of both weak and strong magnetic fields, making this sensor versatile.

Maximum Magnetic Field Range: 4 mT

Wide range of magnetic field measurement allows for detection of both weak and strong magnetic fields, making this sensor versatile.

Body Length/Diameter: 2.92 mm

Compact size and shape facilitate easy installation and integration into various electronic systems.

Termination Type: SOLDER

Solderable termination type simplifies the assembly process and ensures secure connections, enhancing the sensor's reliability.

Mounting Feature: SURFACE MOUNT

Surface mountable design allows for easy and secure attachment to PCB boards, ensuring stable operation and reducing assembly complexity.

Technical Specifications

Magnetic Field Sensors DRV5013ADEDBZR attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

SHORT CIRCUIT PROTECTION

Body Width:

1.3 inch

Body Height:

1.005 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

Hysteresis:

5 mT

JESD-609 Code:

e4

Maximum Magnetic Field Range:

4 mT

Minimum Range Of Magnetic Field:

-4 mT

Mounting Feature:

Maximum Operating Current:

3.5 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.5 V

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Termination Type:

SOLDER

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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