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CP3UB26G18NEPX

Texas Instruments

CP3UB26G18NEPX by Texas Instruments

Texas Instruments CP3UB26G18NEPX microcontroller features 16-bit CPU, 8K data EEPROM, and 12MHz clock frequency. Ideal for industrial applications requiring CAN, I2C, SPI connectivity with low power mode and 54 I/O lines.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,385 parts In-Stock

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Digiode

USA . 2,218 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,146 parts In-Stock

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$3.000

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$3.000

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AZTECH Wire

Italy . 599 parts In-Stock

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$6.763

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Parana Technologies

USA . 903 parts In-Stock

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$32.186

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$100.348

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903

$32.186

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DigiPath Technology Company

USA . 705 parts In-Stock

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$35.441

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$32.605

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705

$35.441

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Native Components

USA . 960 parts In-Stock

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$35.806

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$34.373

960

$35.806

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$34.373

ChromeModa Solutions

Germany . 5,200 parts In-Stock

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$36.164

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$29.654

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$36.164

$29.654

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IDEA Electronic Components Group

UK . 807 parts In-Stock

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$36.164

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$34.356

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$32.548

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Northwest PG Solutions

USA . 1,194 parts In-Stock

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$39.386

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Corphita

USA . 2,829 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic designs with the CP3UB26G18NEPX by Texas Instruments, a top-tier microcontroller offering unparalleled performance and reliability. Crafted by a trusted industry leader, this cutting-edge device is perfect for a wide range of applications in industrial settings. With advanced features like integrated cache, ADC channels, and DMA capabilities, this microcontroller delivers exceptional value and efficiency to customers seeking top-notch performance. Upgrade your projects today with the CP3UB26G18NEPX and experience the difference of superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications

Integrated Cache: YES

Improves overall performance by storing frequently used data for quick access

Maximum Supply Voltage: 2.75 V

Allows for higher voltage input, increasing versatility in power supply options

On Chip Data RAM Width: 8

Wider data RAM allows for faster data processing and manipulation

Bit Size: 16

Suitable for handling moderate complexity tasks efficiently

Power Supplies (V): 2.5

Stable power supply ensures consistent performance and reliability

No. of Terminals: 128

Sufficient terminals for connecting to various external components and peripherals

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Compact and space-saving design, suitable for applications with limited space

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without performance degradation

CPU Family: CR16C

Part of a well-established CPU family known for high performance and reliability

Data EEPROM Size: 8K

Sufficient EEPROM size for storing critical data and configurations

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture offers high performance and efficiency for embedded applications

Analog To Digital Convertors: 8-Ch 12-Bit

High-quality ADC for accurate analog signal processing

Connectivity: CAN, I2C, SPI, UART(4), USART, USB

Versatile connectivity options for interfacing with a wide range of devices and protocols

ROM Programmability: FLASH

Flash ROM allows for easy reprogramming and updating of firmware

Technical Specifications

Microcontrollers CP3UB26G18NEPX attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

16

Boundary Scan:

YES

CPU Family:

CR16C

Maximum Clock Frequency:

12 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

R-PQFP-G128

JESD-609 Code:

e0

Length:

20 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

4

No. of I/O Lines:

54

No. of Terminals:

128

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP128,.63X.87,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

24 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

20 mA

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

8K

Connectivity:

CAN, I2C, SPI, UART(4), USART, USB

Peripherals:

DMA(4), POR, RTT, TIMER(6), WDT

Analog To Digital Convertors:

8-Ch 12-Bit

Trade Compliance

CP3UB26G18NEPX Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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