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CDCE72010RGCRG4

Texas Instruments

CDCE72010RGCRG4 by Texas Instruments

CDCE72010RGCRG4 by Texas Instruments is a Clock Driver & Buffer with 64 terminals, 3.4 ns propagation delay, and 10 true outputs. It operates in industrial temperature range (-40 to 85 °C) and supports differential mux input conditioning. Ideal for applications requiring precise clock signal distribution in compact electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,789 parts In-Stock

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Digiode

USA . 3,234 parts In-Stock

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One Stop Electronics

USA . 920 parts In-Stock

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$7.000

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$7.000

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Parana Technologies

USA . 970 parts In-Stock

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$12.052

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$12.461

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970

$12.052

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ChromeModa Solutions

Germany . 4,927 parts In-Stock

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$13.542

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$11.104

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IDEA Electronic Components Group

UK . 875 parts In-Stock

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$13.542

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$12.865

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$12.188

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875

$13.542

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$12.188

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AZTECH Wire

Italy . 368 parts In-Stock

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$14.383

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Native Components

USA . 902 parts In-Stock

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$18.410

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Northwest PG Solutions

USA . 1,661 parts In-Stock

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$20.251

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$18.226

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Ampacity Inc.

Singapore . 1,375 parts In-Stock

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$52.000

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A-Z Elektronik GmbH

Germany . 4,904 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,269 parts In-Stock

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Microchip USA

USA . 1,376 parts In-Stock

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DigiPath Technology Company

USA . 1,369 parts In-Stock

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Corphita

USA . 241 parts In-Stock

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Kepictronics

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the CDCE72010RGCRG4 clock driver & buffer. This innovative product offers precise input conditioning, fast propagation delay, and versatile output characteristics to meet a variety of industrial applications. With a compact chip carrier package and a wide temperature range, this clock driver provides exceptional performance in challenging environments. Trust Texas Instruments for cutting-edge technology and superior value in every product. Elevate your designs with the CDCE72010RGCRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and reliability for the package body, making this product suitable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and convenient assembly of the product onto circuit boards.

Input Conditioning: DIFFERENTIAL MUX

Differential multiplexer input conditioning helps in efficient signal processing and ensures accurate data transmission.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a moderate supply voltage of 3.3V, suitable for various electronic applications.

Propagation Delay (tpd): 3.4 ns

Low propagation delay ensures quick signal transmission and response time, important for time-sensitive applications.

Maximum Operating Temperature: 85 °C

Can operate effectively in high-temperature environments up to 85°C, suitable for industrial applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel/Palladium/Gold terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures down to -40°C, making it suitable for diverse operating conditions.

No. of True Outputs: 10

Provides multiple true outputs, allowing for versatile signal routing and data distribution.

Minimum fmax: 1500 MHz

High minimum fmax of 1500 MHz ensures fast clock driver and buffer performance, ideal for high-frequency applications.

Technical Specifications

Clock Drivers & Buffers CDCE72010RGCRG4 attributes and parameters. Explore more Clock Drivers & Buffers devices from Texas Instruments

Specs

Family:

72010

Input Conditioning:

DIFFERENTIAL MUX

JESD-30 Code:

S-PQCC-N64

JESD-609 Code:

e4

Length:

9 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Inverted Outputs:

0

No. of Terminals:

64

No. of True Outputs:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

3.4 ns

Qualification:

Not Qualified

Maximum Same Edge Skew (tskwd):

2.8 ns

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

9 mm

Minimum fmax:

1500 MHz

Trade Compliance

CDCE72010RGCRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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