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CDC421312RGER

Texas Instruments

CDC421312RGER by Texas Instruments

CDC421312RGER clock generator by Texas Instruments operates at a max frequency of 312.5 MHz with a supply voltage range of 3-3.6 V. This CMOS technology chip carrier is ideal for industrial applications requiring precise timing and clock generation in compact spaces, featuring a quad-terminal position and nickel palladium gold finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,955 parts In-Stock

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Digiode

USA . 859 parts In-Stock

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Native Components

USA . 536 parts In-Stock

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$0.137

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$0.132

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Northwest PG Solutions

USA . 98 parts In-Stock

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$0.151

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One Stop Electronics

USA . 397 parts In-Stock

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$2.000

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AZTECH Wire

Italy . 754 parts In-Stock

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$17.219

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Parana Technologies

USA . 1,614 parts In-Stock

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$44.307

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$4,114.565

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$39.876

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DigiPath Technology Company

USA . 639 parts In-Stock

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$48.787

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Corohmni

South Africa . 2,952 parts In-Stock

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$49.709

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ChromeModa Solutions

Germany . 4,485 parts In-Stock

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$49.783

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$40.822

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IDEA Electronic Components Group

UK . 186 parts In-Stock

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$49.783

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$47.294

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$44.805

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A-Z Elektronik GmbH

Germany . 5,267 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,511 parts In-Stock

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Corphita

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Microchip USA

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Overview

Elevate your electronics with the CDC421312RGER clock generator from Texas Instruments. Crafted with precision and quality, this clock generator is a game-changer in its category. Perfect for a wide range of applications, this product offers exceptional value and benefits to customers looking for reliable performance and efficiency. Say goodbye to outdated technology and hello to a new era of innovation with the CDC421312RGER by Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making it ideal for portable electronic devices.

Surface Mount: YES

Surface mount technology allows for easy integration onto printed circuit boards, saving space and facilitating automated assembly processes.

Maximum Supply Voltage: 3.6 V

Supports a wide range of supply voltages, offering flexibility in different operating environments.

Maximum Output Clock Frequency: 312.5 MHz

High output clock frequency enables fast data processing and signal synchronization in complex electronic systems.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes the clock generator suitable for industrial applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, ensuring reliable performance in various electronic devices.

Technical Specifications

Clock Generators CDC421312RGER attributes and parameters. Explore more Clock Generators devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

312.5 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Nominal Primary Clock/Crystal Frequency:

31.25 MHz

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Clock Generators

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Peripheral IC Type:

Trade Compliance

CDC421312RGER Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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