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CD4030BMG4

Texas Instruments

CD4030BMG4 by Texas Instruments

CD4030BMG4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 280 ns at 5V, suitable for military-grade applications. With a small outline package style and surface mount capability, it operates within a wide temperature range from -55 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,978 parts In-Stock

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Digiode

USA . 479 parts In-Stock

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Native Components

USA . 109 parts In-Stock

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$1.391

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Northwest PG Solutions

USA . 1,914 parts In-Stock

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$1.530

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AZTECH Wire

Italy . 429 parts In-Stock

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$12.813

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Parana Technologies

USA . 483 parts In-Stock

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$21.677

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$2,013.023

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$19.509

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DigiPath Technology Company

USA . 953 parts In-Stock

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$23.869

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ChromeModa Solutions

Germany . 2,790 parts In-Stock

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IDEA Electronic Components Group

UK . 1,001 parts In-Stock

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$21.920

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One Stop Electronics

USA . 899 parts In-Stock

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Component Stockers USA

USA . 421 parts In-Stock

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$99.990

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Microchip USA

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Perfect Parts

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Corphita

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Overview

Unlock the power of cutting-edge technology with Texas Instruments' CD4030BMG4 Logic Gates. Designed for reliability and precision, this product offers unmatched performance in a compact package. With applications ranging from industrial automation to consumer electronics, this versatile component delivers exceptional value and efficiency. Trust Texas Instruments for quality you can rely on. Elevate your projects with the CD4030BMG4 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 280 ns

Low propagation delay ensures fast signal processing, making the logic gates efficient for rapid operations.

Surface Mount: YES

Suitable for automated assembly processes, making the installation of the logic gates quick and efficient.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage supply systems, making it easy to integrate the logic gates into existing circuits.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making the logic gates suitable for use in a variety of environments.

Technology: CMOS

CMOS technology helps in reducing power consumption and offers high noise immunity, enhancing the overall performance of the logic gates.

Technical Specifications

Logic Gates CD4030BMG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

280 ns

Propagation Delay (tpd):

280 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4030BMG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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