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CD4012BM96G4

Texas Instruments

CD4012BM96G4 by Texas Instruments

CD4012BM96G4 by Texas Instruments is a CMOS Logic Gates IC with 2 functions and 4 inputs. It operates at a supply voltage of 5V, has a propagation delay of 250ns, and can handle load capacitance up to 50pF. Ideal for military applications due to its temperature grade and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,001 parts In-Stock

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Digiode

USA . 1,430 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Parana Technologies

USA . 1,296 parts In-Stock

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$15.730

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$16.093

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$15.730

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AZTECH Wire

Italy . 790 parts In-Stock

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$17.116

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790

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DigiPath Technology Company

USA . 886 parts In-Stock

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$17.321

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$15.935

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886

$17.321

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ChromeModa Solutions

Germany . 5,978 parts In-Stock

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$17.674

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$14.493

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IDEA Electronic Components Group

UK . 1,085 parts In-Stock

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$17.674

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$16.790

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$15.907

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One Stop Electronics

USA . 1,470 parts In-Stock

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$19.000

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$19.000

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Ampacity Inc.

Singapore . 356 parts In-Stock

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$64.000

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Microchip USA

USA . 11,169 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,043 parts In-Stock

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Argo Parts USA

USA . 4,908 parts In-Stock

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Corphita

USA . 2,908 parts In-Stock

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Continental Prestige Electronics

USA . 1,413 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your electronic projects with the CD4012BM96G4 by Texas Instruments, a top-tier Logic Gates component that guarantees superior quality and reliability. Designed to meet the highest industry standards, this product offers unmatched performance and precision for your applications. With a wide range of functionalities and inputs, this logic gate is perfect for a variety of projects. Trust in Texas Instruments' reputation for excellence and innovation, and experience the value and benefits that the CD4012BM96G4 can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Propagation Delay At Nominal Supply: 250 ns

Low propagation delay ensures fast response times, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Ease of installation on circuit boards, saves space and simplifies manufacturing processes.

No. of Functions: 2

Ability to perform multiple logical functions in one component, saving space and reducing component count on a circuit board.

Nominal Supply Voltage / Vsup (V): 5

Compatible with common 5V power supplies, making it widely usable in various applications.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments, ensuring reliability in harsh conditions.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, suitable for a wide range of operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Maximum Power Supply Current (ICC): 0.03 mA

Low power consumption, reducing energy costs and heat generation.

Technical Specifications

Logic Gates CD4012BM96G4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

250 ns

Propagation Delay (tpd):

250 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4012BM96G4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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