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CD4009UBM96

Texas Instruments

CD4009UBM96 by Texas Instruments

CD4009UBM96 by Texas Instruments is a logic gate with 6 functions, 140 ns propagation delay at 5V, and open-drain output. It operates in temperatures from -55 to 125°C and is suitable for military-grade applications requiring fast signal processing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,666 parts In-Stock

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Digiode

USA . 3,855 parts In-Stock

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Northwest PG Solutions

USA . 1,687 parts In-Stock

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$2.750

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$2.750

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Parana Technologies

USA . 1,818 parts In-Stock

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$18.249

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$18.382

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AZTECH Wire

Italy . 355 parts In-Stock

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$19.510

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DigiPath Technology Company

USA . 543 parts In-Stock

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$20.094

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543

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ChromeModa Solutions

Germany . 1,934 parts In-Stock

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$20.504

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$16.813

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IDEA Electronic Components Group

UK . 1,292 parts In-Stock

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$20.504

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$19.479

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$18.454

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One Stop Electronics

USA . 1,638 parts In-Stock

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$55.000

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QUARKTWIN TECHNOLOGY LTD

USA . 22,484 parts In-Stock

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Corphita

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Native Components

USA . 669 parts In-Stock

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Microchip USA

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Overview

Unlock the power of advanced logic gates with the CD4009UBM96 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package. Ideal for a wide range of applications, this product boasts a fast propagation delay and open-drain output characteristics. With a small outline design and military-grade temperature tolerance, the CD4009UBM96 offers unmatched value and performance. Upgrade your projects today with Texas Instruments' industry-leading logic gates.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for long-lasting use.

Propagation Delay At Nominal Supply: 140 ns

Fast response time for efficient operation.

Surface Mount: YES

Easy to install and saves space on the circuit board.

No. of Functions: 6

Versatile and can perform multiple logic operations.

Nominal Supply Voltage / Vsup (V): 5

Common voltage supply making it compatible with standard systems.

Load Capacitance (CL): 50 pF

Optimal capacitance for efficient signal processing.

Output Characteristics: OPEN-DRAIN

Suitable for open-collector output applications.

Technology: CMOS

Low power consumption and high noise immunity.

Technical Specifications

Logic Gates CD4009UBM96 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

140 ns

Propagation Delay (tpd):

140 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

CD4009UBM96 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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