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CD4001UBPWRG4

Texas Instruments

CD4001UBPWRG4 by Texas Instruments

CD4001UBPWRG4 by Texas Instruments is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 120ns propagation delay at 5V. It operates in temperatures ranging from -55 to 125°C and is suitable for military-grade applications requiring low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,993 parts In-Stock

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Vyrian

USA . 2,969 parts In-Stock

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2,969

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Native Components

USA . 807 parts In-Stock

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$7.155

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Parana Technologies

USA . 938 parts In-Stock

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$12.721

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$13.186

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938

$12.721

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One Stop Electronics

USA . 197 parts In-Stock

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$13.000

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ChromeModa Solutions

Germany . 3,637 parts In-Stock

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$14.293

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$11.720

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IDEA Electronic Components Group

UK . 1,036 parts In-Stock

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$14.293

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$13.578

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$12.864

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$12.864

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AZTECH Wire

Italy . 654 parts In-Stock

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$15.887

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Microchip USA

USA . 3,638 parts In-Stock

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Northwest PG Solutions

USA . 749 parts In-Stock

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DigiPath Technology Company

USA . 273 parts In-Stock

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$12.887

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Corphita

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Overview

Enhance your electronic projects with the Texas Instruments CD4001UBPWRG4 Logic Gates. With a reputation for high-quality components, Texas Instruments delivers reliability and performance in every product. The CD4001UBPWRG4 features 4 functions, 2 inputs, and a fast propagation delay of 120ns, making it ideal for a wide range of applications. From DIY hobbyists to professional engineers, this logic gate offers value, efficiency, and versatility, ensuring seamless integration into your designs. Upgrade your projects with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 120 ns

The low propagation delay ensures fast signal processing, making these logic gates suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards, saving space and facilitating mass production.

Nominal Supply Voltage: 5V

Compatible with standard 5V power supplies, making integration into existing systems straightforward.

Maximum Operating Temperature: 125°C

Can operate in high-temperature environments without compromising performance, suitable for industrial or automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates CD4001UBPWRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6.8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Maximum Power Supply Current (ICC):

.03 mA

Propagation Delay At Nominal Supply:

120 ns

Propagation Delay (tpd):

120 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

CD4001UBPWRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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