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CD4001UBNSRE4

Texas Instruments

CD4001UBNSRE4 by Texas Instruments

CD4001UBNSRE4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It operates at a nominal voltage of 5V, with a propagation delay of 120ns. This small outline package is ideal for military-grade applications requiring fast signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,510 parts In-Stock

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Digiode

USA . 3,431 parts In-Stock

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3,431

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Distributors (Availability)

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Native Components

USA . 685 parts In-Stock

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$0.091

100+ parts

-

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$0.087

685

$0.091

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$0.087

Northwest PG Solutions

USA . 1,031 parts In-Stock

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$0.100

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$0.088

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$0.100

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$0.088

AZTECH Wire

Italy . 867 parts In-Stock

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$8.382

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867

$8.382

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Parana Technologies

USA . 237 parts In-Stock

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$15.879

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$16.236

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237

$15.879

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DigiPath Technology Company

USA . 563 parts In-Stock

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$17.485

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563

$17.485

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ChromeModa Solutions

Germany . 5,695 parts In-Stock

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$17.842

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$14.630

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$17.842

$14.630

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IDEA Electronic Components Group

UK . 629 parts In-Stock

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$17.842

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$16.950

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$16.058

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629

$17.842

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$16.058

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One Stop Electronics

USA . 912 parts In-Stock

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$31.000

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$31.000

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QUARKTWIN TECHNOLOGY LTD

USA . 15,821 parts In-Stock

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Corphita

USA . 3,727 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the CD4001UBNSRE4 by Texas Instruments, a top-quality logic gate that offers unparalleled performance and reliability. Manufactured by Texas Instruments, known for its cutting-edge technology and innovation, this product is ideal for a wide range of applications. With its durable plastic/epoxy package body material and fast propagation delay, this logic gate ensures efficient and precise operation. Experience the value and benefits of this product, from its small outline package style to its military-grade temperature grade. Trust Texas Instruments for high-quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, making it convenient for handling and ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 120 ns

The low propagation delay at nominal supply ensures fast and efficient performance, making the product suitable for time-critical applications.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is a common standard in many electronic systems, making this product compatible with a wide range of devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in extreme environmental conditions.

Technical Specifications

Logic Gates CD4001UBNSRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

Length:

10.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

120 ns

Propagation Delay (tpd):

120 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

CD4001UBNSRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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