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74LVC1G3208DBVTG4

Texas Instruments

74LVC1G3208DBVTG4 by Texas Instruments

74LVC1G3208DBVTG4 by Texas Instruments is a CMOS logic gate with 3 inputs, 5.9 ns propagation delay, and 32 Amp max I (ol). It operates at a supply voltage of 1.8V to 5.5V, making it ideal for automotive applications requiring fast signal processing in compact designs. The package style is small outline with low profile and shrink pitch, suitable for surface mount assembly in tight spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,455 parts In-Stock

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Digiode

USA . 1,587 parts In-Stock

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1,587

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Native Components

USA . 502 parts In-Stock

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$0.878

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Northwest PG Solutions

USA . 438 parts In-Stock

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$0.966

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One Stop Electronics

USA . 1,633 parts In-Stock

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$4.000

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AZTECH Wire

Italy . 518 parts In-Stock

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$13.778

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Parana Technologies

USA . 1,573 parts In-Stock

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$29.432

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$59.283

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ChromeModa Solutions

Germany . 1,624 parts In-Stock

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$33.070

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$27.117

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IDEA Electronic Components Group

UK . 1,439 parts In-Stock

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$33.070

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$31.416

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$29.763

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Corphita

USA . 3,912 parts In-Stock

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DigiPath Technology Company

USA . 1,370 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the 74LVC1G3208DBVTG4 by Texas Instruments, a top-tier manufacturer known for producing high-quality logic gates. Perfect for a wide range of applications, this product offers reliable performance and efficient operation. With its compact design and low power consumption, it provides exceptional value to customers seeking superior functionality in their designs. Upgrade your projects today with the Texas Instruments 74LVC1G3208DBVTG4 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the logic gate easy to handle and resistant to damage.

Propagation Delay At Nominal Supply: 5.9 ns

With low propagation delay, this logic gate can process signals quickly, improving overall system performance.

Surface Mount: YES

Being surface mountable saves space on the PCB and allows for automated assembly processes, increasing efficiency.

No. of Inputs: 3

Having multiple inputs enables the logic gate to perform more complex operations, increasing its versatility.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage helps in reducing power consumption and heat generation, making the product energy-efficient.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures compatibility with different circuit configurations, making it a versatile choice for various applications.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this logic gate can withstand harsh environmental conditions, increasing its reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gate suitable for battery-operated devices or noise-sensitive applications.

Technical Specifications

Logic Gates 74LVC1G3208DBVTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.9 ns

Propagation Delay (tpd):

17.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

74LVC1G3208DBVTG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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