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74LVC1G3208DBVRE4

Texas Instruments

74LVC1G3208DBVRE4 by Texas Instruments

74LVC1G3208DBVRE4 by Texas Instruments is a CMOS logic gate with 3 inputs, 5.9 ns propagation delay, and 32 Amp max I (ol). It operates at a supply voltage of 1.8V and is ideal for automotive applications due to its low profile design and wide temperature range of -40 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,789 parts In-Stock

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Digiode

USA . 1,930 parts In-Stock

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Native Components

USA . 279 parts In-Stock

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$1.610

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Northwest PG Solutions

USA . 1,610 parts In-Stock

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$1.771

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One Stop Electronics

USA . 349 parts In-Stock

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$10.000

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AZTECH Wire

Italy . 237 parts In-Stock

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$13.331

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Parana Technologies

USA . 2,195 parts In-Stock

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$24.365

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$25.038

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DigiPath Technology Company

USA . 438 parts In-Stock

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$26.828

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ChromeModa Solutions

Germany . 6,705 parts In-Stock

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$22.448

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IDEA Electronic Components Group

UK . 760 parts In-Stock

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$26.007

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Ampacity Inc.

Singapore . 751 parts In-Stock

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Microchip USA

USA . 2,604 parts In-Stock

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Corphita

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Overview

Unlock the power of advanced technology with the 74LVC1G3208DBVRE4 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability in their products. This logic gate is perfect for a wide range of applications, offering fast propagation delays and low power consumption. Experience seamless integration and improved performance with this compact and efficient solution. Upgrade your projects with the unparalleled value and benefits this product has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable electronic devices.

Propagation Delay At Nominal Supply: 5.9 ns

The low propagation delay ensures fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Being surface mountable saves space on the PCB and simplifies the assembly process.

No. of Inputs: 3

Having multiple inputs allows for more complex logic operations to be performed.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate this product into existing PCB designs.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V makes this product energy efficient.

Load Capacitance (CL): 50 pF

The moderate load capacitance ensures stable operation in various circuit configurations.

Power Supplies (V): 3.3

Supporting power supplies of 3.3V makes this product compatible with a wide range of systems.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting the logic gate to other components in the circuit.

Maximum I (ol): 32 Amp

The high output current capability of 32 Amp allows this logic gate to drive heavy loads.

Propagation Delay (tpd): 17.5 ns

Despite the low supply voltage, the propagation delay of 17.5 ns ensures fast signal processing.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product is suitable for harsh environments.

Minimum Operating Temperature: -40 °C

The ability to operate at temperatures as low as -40°C makes this product versatile in various applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold finish ensures reliable electrical connections and prevents corrosion.

Terminal Position: DUAL

Dual terminal position allows for easy insertion and soldering on the PCB.

Maximum Seated Height: 1.45 mm

The low seated height of 1.45 mm saves space on the PCB, especially in compact designs.

Width: 1.6 mm

The slim width of 1.6 mm enables dense packing of components on the PCB.

Minimum Supply Voltage (Vsup): 1.65 V

With a minimum supply voltage of 1.65V, this product can operate in low-power mode efficiently.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second time at peak reflow temperature ensures reliable soldering during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this product can withstand the soldering process without degradation.

Length: 2.9 mm

The compact length of 2.9 mm allows for space-efficient placement on the PCB.

Temperature Grade: AUTOMOTIVE

Being automotive-grade, this product meets strict quality and reliability requirements for automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy efficient and reliable.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical stability during soldering and handling.

Packing Method: TR

TR packing method allows for easy pick-and-place assembly in automated manufacturing processes.

Terminal Pitch: 0.95 mm

The fine terminal pitch of 0.95 mm enables high-density mounting of components on the PCB.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this product can handle a wide range of input voltages.

Maximum Power Supply Current (ICC): 0.01 mA

The low maximum power supply current of 0.01 mA minimizes power consumption and heat dissipation.

Technical Specifications

Logic Gates 74LVC1G3208DBVRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5.9 ns

Propagation Delay (tpd):

17.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

74LVC1G3208DBVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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