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74LVC1G125DRLRG4

Texas Instruments

74LVC1G125DRLRG4 by Texas Instruments

74LVC1G125DRLRG4 by Texas Instruments is a CMOS bus driver with 3.3V supply voltage, 4.7ns propagation delay, and 32A max I (ol). It is ideal for automotive applications due to its small outline package and true output polarity in a surface-mount design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,586 parts In-Stock

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Vyrian

USA . 2,121 parts In-Stock

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Native Components

USA . 227 parts In-Stock

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$0.477

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$0.458

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$0.458

Northwest PG Solutions

USA . 1,638 parts In-Stock

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$0.524

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$0.462

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Andel Nordic

Denmark . 9 parts In-Stock

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$7.942

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$7.625

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$7.625

9

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$7.625

AZTECH Wire

Italy . 539 parts In-Stock

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$16.437

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Parana Technologies

USA . 1,789 parts In-Stock

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$19.038

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$19.092

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DigiPath Technology Company

USA . 1,800 parts In-Stock

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$20.963

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ChromeModa Solutions

Germany . 2,843 parts In-Stock

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$21.391

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$17.541

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IDEA Electronic Components Group

UK . 1,177 parts In-Stock

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$21.391

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$20.321

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$19.252

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One Stop Electronics

USA . 915 parts In-Stock

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$52.000

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Corphita

USA . 1,626 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic projects with the Texas Instruments 74LVC1G125DRLRG4, a high-quality bus driver and transceiver designed for optimal performance. With a reputable manufacturer like Texas Instruments, you can trust in the reliability and durability of this product. Whether you're working on automotive applications or other projects requiring precision and efficiency, this component offers value and benefits that will exceed your expectations. Experience the advantages of fast propagation delay, low power consumption, and compact design to streamline your designs and achieve outstanding results. Upgrade your circuits with the 74LVC1G125DRLRG4 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for rugged environments.

Propagation Delay At Nominal Supply: 4.7 ns

Fast propagation delay ensures quick signal transmission.

Surface Mount: YES

Easy to integrate into circuit boards for efficient assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with commonly used supply voltages.

Load Capacitance (CL): 50 pF

Optimal load capacitance for reliable signal transmission.

Maximum I (ol): 32 Amp

High output current capability for driving bus lines.

Output Characteristics: 3-STATE

Ability to drive bus lines into a high-impedance state for bus arbitration.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications with wide operating temperature range.

Technology: CMOS

Low power consumption and high noise immunity.

Technical Specifications

Bus Driver & Transceivers 74LVC1G125DRLRG4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e4

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.2 mm

Trade Compliance

74LVC1G125DRLRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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