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74ACT11032DBRE4

Texas Instruments

74ACT11032DBRE4 by Texas Instruments

74ACT11032DBRE4 by Texas Instruments is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 9 ns at a nominal voltage of 5V, making it suitable for industrial applications requiring fast signal processing in a compact package. With surface mount capability and CMOS technology, this device operates efficiently within a temperature range of -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,112 parts In-Stock

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Digiode

USA . 4,578 parts In-Stock

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Parana Technologies

USA . 1,553 parts In-Stock

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$12.412

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$12.850

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$12.412

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$12.850

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DigiPath Technology Company

USA . 292 parts In-Stock

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$13.667

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ChromeModa Solutions

Germany . 3,051 parts In-Stock

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$13.946

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$11.436

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$13.946

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IDEA Electronic Components Group

UK . 434 parts In-Stock

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$13.946

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$13.249

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$12.551

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434

$13.946

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$12.551

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AZTECH Wire

Italy . 267 parts In-Stock

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$16.421

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One Stop Electronics

USA . 1,559 parts In-Stock

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$55.000

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QUARKTWIN TECHNOLOGY LTD

USA . 12,557 parts In-Stock

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Microchip USA

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Northwest PG Solutions

USA . 1,345 parts In-Stock

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Corphita

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Native Components

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Overview

Experience unmatched quality and reliability with the 74ACT11032DBRE4 by Texas Instruments, a leading manufacturer in the industry. This logic gates product offers exceptional performance with a fast propagation delay of just 9 ns, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this versatile component delivers value and benefits that exceed expectations. Trust Texas Instruments for cutting-edge technology and innovative solutions that drive your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 9 ns

Fast propagation delay ensures quick response time for the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation onto circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage makes these logic gates compatible with a wide range of electronic systems and components.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates 74ACT11032DBRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

CENTER PIN VCC AND GND

Family:

ACT

JESD-30 Code:

R-PDSO-G16

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

74ACT11032DBRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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