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2N424

Texas Instruments

2N424 by Texas Instruments

2N424 by Texas Instruments is a NPN Power BJT with 85W power dissipation, hFE of 12, and max temp of 200°C. Ideal for high-power applications in industries like automotive and industrial electronics due to its robust metal package and single configuration.

Median Price

$33.295

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 31 parts In-Stock

1+ parts

$7.590

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31

$7.590

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TEDSS.com

USA . 6 parts In-Stock

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$59.000

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6

$59.000

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Vyrian

USA . 3,259 parts In-Stock

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3,259

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Digiode

USA . 3,179 parts In-Stock

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3,179

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ACDS - Activité Composants Distribution Service

France . 38 parts In-Stock

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38

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ECAB

Sweden . 34 parts In-Stock

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34

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Halfin

Belgium . 14 parts In-Stock

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14

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Electronic Expediters

USA . 3 parts In-Stock

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3

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Lakeland Logistics Inc

USA . 1 parts In-Stock

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1

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Bristol Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 558 parts In-Stock

1+ parts

$0.105

100+ parts

-

1k+ parts

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10k+ parts

$0.101

558

$0.105

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-

$0.101

Northwest PG Solutions

USA . 338 parts In-Stock

1+ parts

$0.116

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$0.102

338

$0.116

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$0.102

Parana Technologies

USA . 980 parts In-Stock

1+ parts

$0.914

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$1.834

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980

$0.914

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$1.834

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DigiPath Technology Company

USA . 826 parts In-Stock

1+ parts

$1.006

100+ parts

$0.926

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826

$1.006

$0.926

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ChromeModa Solutions

Germany . 6,820 parts In-Stock

1+ parts

$1.027

100+ parts

$0.842

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6,820

$1.027

$0.842

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IDEA Electronic Components Group

UK . 1,209 parts In-Stock

1+ parts

$1.027

100+ parts

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$0.924

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1,209

$1.027

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$0.924

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AZTECH Wire

Italy . 747 parts In-Stock

1+ parts

$15.143

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747

$15.143

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One Stop Electronics

USA . 179 parts In-Stock

1+ parts

$42.050

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179

$42.050

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Corphita

USA . 3,771 parts In-Stock

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3,771

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Assy Fe

Spain . 25 parts In-Stock

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25

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RTC Component Inc.

USA . 4 parts In-Stock

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4

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Overview

Elevate your power control solutions with the 2N424 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability in their products. The 2N424 falls under the category of Power Bipolar Junction Transistors (BJT) and is perfect for applications requiring high power dissipation. With a maximum power dissipation of 85 W and a minimum DC current gain of 12, this NPN transistor offers exceptional performance and efficiency. Whether you're working on power supplies, motor controls, or amplifier circuits, the 2N424 provides the value, benefits, and advantages that customers need for their projects. Upgrade to Texas Instruments for unparalleled quality and performance.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to integrate into circuits.

Maximum Power Dissipation (Abs) 85 W

High maximum power dissipation allows the transistor to handle higher power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy mounting options and secure connection in a variety of applications.

Minimum DC Current Gain (hFE): 12

Higher minimum DC current gain ensures reliable and stable amplification in circuits.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows the transistor to be used in a wide range of temperature conditions.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability, making this product a durable choice.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy connections and mounting in circuits.

Case Connection: COLLECTOR

Collector case connection ensures proper current flow and efficient performance in circuit applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N424 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Configuration:

Minimum DC Current Gain (hFE):

12

JESD-30 Code:

O-MBFM-X3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

2N424 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-680-9745, 5961006809745, 5961-99-118-3351, 5961991183351

NIIN

006809745, 991183351

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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