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2N4240

Texas Instruments

2N4240 by Texas Instruments

2N4240 by Texas Instruments is a NPN BJT with 35W power dissipation, 300V collector-emitter voltage, and 15MHz transition frequency. Ideal for applications requiring high-power amplification in electronic circuits.

Median Price

$42.020

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 43 parts In-Stock

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$42.020

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$39.010

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$39.010

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TEDSS.com

USA . 100 parts In-Stock

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$2.650

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Bristol Electronics

USA . 8,300 parts In-Stock

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$8.691

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$3.766

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$3.563

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$8.691

$3.766

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American Microsemiconductor Inc.

USA . 55 parts In-Stock

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$10.120

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Ace Electronics

USA . 469 parts In-Stock

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Digiode

USA . 2,914 parts In-Stock

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Vyrian

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Halfin

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ComSIT Distribution GmbH

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Elcom Components

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Fibra_Brandt Electronic GMBH

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Corel Iberica Componentes, S.L.

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Resion

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MISTER SPROCKETS

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Amar Radio Corporation

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Electronic Expediters

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Eagle Technology Solutions

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ECAB

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Electro Mavin

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Martec Srl

Italy . 26 parts In-Stock

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PUI

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LittleDiode

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PAR Electronics

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Electronics Depot

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Huijzer Components

Netherlands . 7 parts In-Stock

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Lakeview Electronics

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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ICP Electronique

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Sinequanon

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Parana Technologies

USA . 526 parts In-Stock

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$0.700

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$1.735

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526

$0.700

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$1.735

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DigiPath Technology Company

USA . 1,818 parts In-Stock

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$0.770

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$0.709

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1,818

$0.770

$0.709

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ChromeModa Solutions

Germany . 6,519 parts In-Stock

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$0.786

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$0.645

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IDEA Electronic Components Group

UK . 980 parts In-Stock

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$0.786

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$0.707

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Andel Nordic

Denmark . 2,656 parts In-Stock

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$2.428

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$2.330

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$2.330

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$2.330

Corphita

USA . 208 parts In-Stock

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$37.818

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Component Stockers USA

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$41.400

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Microchip USA

USA . 5,567 parts In-Stock

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$91.801

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Glotronic Ltd.

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Northwest PG Solutions

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Native Components

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Supply Digital

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RTC Component Inc.

USA . 126 parts In-Stock

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Fulton Briggs Corp.

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Assy Fe

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Perfect Parts

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Overview

Unleash the power of innovation with the 2N4240 by Texas Instruments. Designed with precision and reliability in mind, this Power Bipolar Junction Transistor (BJT) is a game-changer in the world of electronics. From its durable metal package body to its high operating temperature, this NPN transistor delivers unmatched performance. Whether you're working on industrial automation or consumer electronics, the 2N4240 offers the perfect balance of power and efficiency. Elevate your projects with Texas Instruments' commitment to excellence and unlock endless possibilities today.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation, which is crucial for power transistors to maintain optimal performance and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and provide high current gain, making them suitable for various power applications.

Maximum Power Dissipation (Abs): 35 W

The high maximum power dissipation of 35W allows this transistor to handle higher power loads without overheating, making it suitable for power applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage of 300V allows this transistor to handle high voltage applications with ease.

Nominal Transition Frequency (fT): 15 MHz

The high transition frequency of 15MHz indicates that this transistor can switch at a faster rate, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4240 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-66

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4240 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-876-6606, 5961008766606, 5961-00-813-5111, 5961008135111, 5961-01-070-0886, 5961010700886, 5961-99-118-9557, 5961991189557

NIIN

008766606, 008135111, 010700886, 991189557

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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