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BF998RW

Telefunken Microelectronics

BF998RW by Telefunken Microelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 62,077 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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62,077

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Technical Specifications

Power Field Effect Transistors (FET) BF998RW attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Telefunken Microelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

BF998RW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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