Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 4 V;
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Aranea Global
RF Small Signal Field Effect Transistors (FET) FHX35LGT/002 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Sumitomo Electric Industries
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Operating Mode:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
FHX35LGT/002 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Founded 1897 in Osaka, Japan, Sumitomo Electric has extensive business operations in five industries: Automotive, Infocommunications, Electronics, Energy and Environment, Industrial Materials.
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
BAV99
Zetex Plc
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BSS138BK,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
1N4148
Digitron Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
KYOCERA AVX
2N7002,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
J308RL1
J308RL1 by Onsemi is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
TGF1350XPMX
Texas Instruments
TGF1350XPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage, 8dB Power Gain, and operates in DEPLETION MODE. Ideal for KU BAND applications, it has a 0.1A Drain Current, 0.7W Power Dissipation at 150°C, and features GALLIUM ARSENIDE technology.
NE3210S01-T1
Renesas Electronics
NE3210S01-T1 by Renesas Electronics is a N-CHANNEL RF FET for AMPLIFIER applications. Features include Gp of 12 dB, DEPLETION MODE operation, and KU BAND frequency band. With a max power dissipation of 0.165 W and operating temp up to 125 °C, it's ideal for MICROWAVE systems.
934021470235
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;
BF410D
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BF1212WR,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
California Eastern Laboratories
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
2N4221
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): .015 A; Field Effect Transistor Technology: JUNCTION; Terminal Form: WIRE;
BF245C
Baneasa S A
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; No. of Elements: 1; Qualification: Not Qualified;
934057512215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER;
BF511T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF998R
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .03 A; Case Connection: SOURCE;
BFU309
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Minimum DS Breakdown Voltage: 25 V;
ATF-55143-TR2G
Broadcom
Broadcom ATF-55143-TR2G is a N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band. It features 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C. The transistor's high electron mobility technology ensures efficient performance in small outline package style.
JANTXV2N3823
Defense Logistics Agency
JANTXV2N3823 by Defense Logistics Agency is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers VERY HIGH FREQUENCY BAND performance. With a METAL package and SILICON element, it's ideal for MIL-19500/375G compliant applications.
ATF-36163-BLKG
Agilent Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .18 W; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Terminal Form: GULL WING;
BF511-TAPE-13
BF511-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in depletion mode, and supports very high frequencies. This compact surface mount transistor ensures reliable performance up to 150 °C.
934054130115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
ATF-36163-TR1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
BLA8G1011L-300G
RF Small Signal Field-Effect Transistors;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FHX35LG
Fujitsu
Fujitsu FHX35LG is an N-CHANNEL RF FET with 8.5 dB Gp for AMPLIFIER applications in KU BAND. It features a CERAMIC, METAL-SEALED COFIRED package, operates in DEPLETION MODE, and has a max power dissipation of 0.29 W at 175 °C.
FHX35LG/002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: DEPLETION MODE; Additional Features: LOW NOISE;
FHX35X
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Package Style (Meter): UNCASED CHIP; Qualification: Not Qualified;
FHX35LP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; Maximum Power Dissipation Ambient: .29 W; Package Style (Meter): DISK BUTTON;
Sumitomo Electric Industries
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; JESD-30 Code: O-CRDB-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: RADIAL;
FHX35X/002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Body Material: UNSPECIFIED;
Eudyna Devices
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM ARSENIDE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: RADIAL; No. of Elements: 1; Additional Features: HIGH RELIABILITY;
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