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VNP35N07TR-E

STMicroelectronics

VNP35N07TR-E by STMicroelectronics

VNP35N07TR-E by STMicroelectronics is an N-CHANNEL FET with 60V DS Breakdown Voltage, 35A ID, and 0.035 ohm RDS(ON). It operates in ENHANCEMENT MODE and has a max power dissipation of 40W. Ideal for automotive applications meeting AEC-Q101 standard.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,849 parts In-Stock

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3,849

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Anansix

USA . 2,881 parts In-Stock

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2,881

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Vyrian

USA . 1,569 parts In-Stock

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1,569

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,059 parts In-Stock

1+ parts

$1.821

100+ parts

-

1k+ parts

$1.639

10k+ parts

-

1,059

$1.821

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$1.639

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MKK Technologies

India . 1,714 parts In-Stock

1+ parts

$3.424

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1,714

$3.424

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DigiPath Technology Company

USA . 1,714 parts In-Stock

1+ parts

$3.424

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1,714

$3.424

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AZTECH Wire

Italy . 269 parts In-Stock

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$16.578

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269

$16.578

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Semicontronic

India . 1,214 parts In-Stock

1+ parts

$21.050

100+ parts

$20.524

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$20.418

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1,214

$21.050

$20.524

$20.418

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Ampacity Inc.

Singapore . 833 parts In-Stock

1+ parts

$24.050

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833

$24.050

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Continental Prestige Electronics

USA . 4,327 parts In-Stock

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4,327

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Argo Parts USA

USA . 2,619 parts In-Stock

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2,619

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Corphita

USA . 2,339 parts In-Stock

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2,339

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Parana Technologies

USA . 364 parts In-Stock

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$2.177

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364

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$2.177

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Elevate your power management solutions with the VNP35N07TR-E by STMicroelectronics. Crafted with precision and expertise, this N-CHANNEL Power FET offers unparalleled performance and reliability. Ideal for a wide range of applications, from automotive to industrial, this transistor delivers on efficiency and durability. Experience seamless operation with its enhancement mode and high maximum drain current, ensuring optimal functionality. Trust STMicroelectronics for top-tier quality and innovation in every product, providing you with the value and advantages you need for your projects. Unlock the potential of your designs with the VNP35N07TR-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good strength and durability, making the FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON-state resistance and higher switching speeds compared to P-channel FETs, making them efficient for power applications.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle higher voltages without breakdown, ensuring reliable performance in different circuits.

Maximum Drain Current (Abs) (ID): 35 A

The high maximum drain current rating of 35A allows this FET to handle high power loads efficiently, making it suitable for power applications.

Maximum Power Dissipation (Abs): 40 W

The FET can dissipate up to 40W of power without getting damaged, ensuring reliable operation under varying load conditions.

Maximum Turn On Time (ton): 800 ns

The fast turn-on time of 800 ns enables quick switching of the FET, making it suitable for applications that require high-speed operation.

Maximum Turn Off Time (toff): 1350 ns

The relatively fast turn-off time of 1350 ns ensures efficient switching, reducing power loss and improving overall performance.

Maximum Drain-Source On Resistance: 0.035 ohm

The low ON-state resistance of 0.035 ohm reduces power dissipation and improves efficiency in power applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive quality standard ensures that the FET meets rigorous criteria for performance and reliability in automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) VNP35N07TR-E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

35 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1350 ns

Maximum Turn On Time (ton):

800 ns

Trade Compliance

VNP35N07TR-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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