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TSH111IDT

STMicroelectronics

TSH111IDT by STMicroelectronics

TSH111IDT by STMicroelectronics is a versatile operational amplifier with a max input offset voltage of 2000 µV, a common mode reject ratio of 60 dB, and operates within -40 °C to 85°C. Ideal for industrial applications, it features a compact SO package and supports multiple supply voltages. Its high slew rate of 160 V/µs ensures rapid signal processing in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,719 parts In-Stock

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8,719

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Digiode

USA . 2,735 parts In-Stock

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2,735

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LIBRA Elektronik GmbH

Germany . 466 parts In-Stock

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466

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Anansix

USA . 351 parts In-Stock

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351

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 945 parts In-Stock

1+ parts

$2.371

100+ parts

-

1k+ parts

$2.134

10k+ parts

-

945

$2.371

-

$2.134

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MKK Technologies

India . 2,350 parts In-Stock

1+ parts

$4.458

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2,350

$4.458

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DigiPath Technology Company

USA . 2,350 parts In-Stock

1+ parts

$4.458

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2,350

$4.458

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AZTECH Wire

Italy . 395 parts In-Stock

1+ parts

$12.690

100+ parts

-

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395

$12.690

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A-Z Elektronik GmbH

Germany . 5,951 parts In-Stock

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5,951

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Microchip USA

USA . 5,274 parts In-Stock

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5,274

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Vigor

Singapore . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 970 parts In-Stock

1+ parts

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$2.835

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970

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$2.835

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Kepictronics

USA . 518 parts In-Stock

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518

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Corphita

USA . 451 parts In-Stock

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451

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Overview

Elevate your designs with the TSH111IDT operational amplifier from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance op-amp boasts low offset voltage and impressive common mode reject ratio, ensuring precision and reliability for demanding applications. Its compact surface-mount package fits effortlessly into modern electronics, making it ideal for audio processing, industrial control, and sensor interfacing. Experience exceptional quality and unmatched support from a trusted manufacturer, empowering your projects to thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body offers durability and is lightweight, making it suitable for various applications.

Maximum Input Offset Voltage: 2000 uV

A low input offset voltage ensures high accuracy in signal amplification, making it ideal for precision applications.

Surface Mount: YES

Surface mount capability allows for compact designs and automated manufacturing processes, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB layouts, enabling better integration into electronic devices.

Nominal Common Mode Reject Ratio: 60 dB

A high common mode reject ratio improves signal integrity by suppressing unwanted noise and interference.

Nominal Supply Voltage / Vsup (V): 2.5

A nominal supply voltage of 2.5 V allows for low-power operation, making it suitable for battery-powered devices.

Power Supplies (V): +-2.5/+-6/+5/+12

Versatile power supply options allow the op-amp to be used in a variety of applications with different voltage requirements.

No. of Terminals: 8

Having 8 terminals provides flexibility for various circuit configurations, enhancing design versatility.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient, allowing for denser layouts on PCBs.

Minimum Slew Rate: 160 V/us

A minimum slew rate of 160 V/us ensures fast response to input signal changes, making it suitable for high-speed applications.

Maximum Supply Voltage Limit: 7 V

The 7 V supply voltage limit allows for wider application in circuits without risking damage to the op-amp.

Maximum Operating Temperature: 85 °C

An operating temperature of up to 85 °C makes this product suitable for many industrial applications.

Maximum Bias Current (IIB) @25°C: 14 uA

Low bias current aids in enhancing battery life in portable devices and reduces power consumption.

Frequency Compensation: YES

Frequency compensation ensures stable performance across a wide range of frequencies, enhancing reliability in applications.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C increases the robustness of the op-amp for use in extreme temperature conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in layout design, accommodating various PCB configurations.

Maximum Seated Height: 1.75 mm

A low seated height contributes to a compact design, making it easier to fit into space-constrained applications.

Width: 3.9 mm

With a width of 3.9 mm, the device can be easily integrated into a variety of circuit designs.

Maximum Time At Peak Reflow Temperature (s): 40

A peak reflow temperature tolerable time of 40 seconds allows compatibility with various surface mount soldering processes.

Peak Reflow Temperature °C: 260

A high peak reflow temperature of 260 °C ensures reliable solder joint formation during manufacturing.

Length: 4.9 mm

Compact dimensions of 4.9 mm in length facilitate easy integration into compact electronic devices.

Temperature Grade: INDUSTRIAL

Industrial temperature grade signifies the op-amp's reliability and suitability for demanding industrial environments.

Maximum Negative Supply Voltage Limit: -7 V

The -7 V limit allows for operational versatility in circuits requiring significant negative voltage.

Technology: BIPOLAR

Bipolar technology provides higher speed and improved thermal performance, enhancing overall efficacy in applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easier handling and soldering, improving manufacturing yield.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is versatile for various applications from signal conditioning to filtering.

Maximum Supply Current: 5 mA

A low maximum supply current of 5 mA ensures energy efficiency benefitting battery-operated designs.

Nominal Negative Supply Voltage (Vsup): -2.5 V

The nominal negative supply voltage of -2.5 V supports flexibility in dual supply applications.

Architecture: CURRENT-FEEDBACK

Current-feedback architecture allows for high-speed operation, beneficial for a wide range of applications.

Packing Method: TAPE AND REEL

Tape and reel packaging simplifies assembly processes and improves compatibility with automated pick-and-place systems.

Nominal Slow Rate: 230 V/us

A nominal slow rate of 230 V/us indicates good performance in applications where quick response is essential.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for tighter packing on PCBs while maintaining ease of soldering.

Technical Specifications

Operational Amplifiers (Op Amps) TSH111IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Current Feedback

Technology:

BIPOLAR

Power Supply:

±2.5/±6/+5/+12 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

2000 uV

Minimum Slew Rate:

160 V/us

Nominal Slew Rate:

230 V/us

Maximum Bias Current (IIB) @25 °C:

14 uA

Operational Characteristics

Nominal Supply Voltage:

2.5 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

-2.5 V

Minimum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

5 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSH111IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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