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TS914AIYDT

STMicroelectronics

TS914AIYDT by STMicroelectronics

TS914AIYDT by STMicroelectronics is a CMOS operational amplifier featuring a max input offset voltage of 7 mV, low bias current of 0.3 nA, and a nominal voltage of 3 V. Ideal for automotive applications, it offers high precision in compact designs. Its small outline package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 9,400 parts In-Stock

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Vyrian

USA . 8,990 parts In-Stock

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8,990

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Digiode

USA . 2,352 parts In-Stock

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Anansix

USA . 1,682 parts In-Stock

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1,682

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Halfin

Belgium . 200 parts In-Stock

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200

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Vigor

Singapore . 2,230 parts In-Stock

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$1.340

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$1.340

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IDEA Electronic Components Group

UK . 1,139 parts In-Stock

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$2.686

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$2.418

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$2.686

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$2.418

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MKK Technologies

India . 428 parts In-Stock

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$5.052

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428

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DigiPath Technology Company

USA . 428 parts In-Stock

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$5.052

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428

$5.052

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AZTECH Wire

Italy . 553 parts In-Stock

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$8.690

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Microchip USA

USA . 4,340 parts In-Stock

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$9.173

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Component Stockers USA

USA . 2,161 parts In-Stock

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$17.520

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Authorized Procurement Solutions

USA . 16,155 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

Germany . 2,063 parts In-Stock

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Parana Technologies

USA . 1,819 parts In-Stock

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$3.212

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Corphita

USA . 839 parts In-Stock

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Overview

Unlock unparalleled performance with the TS914AIYDT operational amplifier from STMicroelectronics. Renowned for its commitment to quality and innovation, STMicroelectronics delivers unmatched reliability and efficiency in a compact design. Perfect for automotive applications, this micropower op-amp excels in low-noise environments, ensuring optimal signal integrity. Experience enhanced precision and reduced power consumption that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components, making it suitable for a variety of applications.

Maximum Input Offset Voltage: 7000 uV

A relatively high input offset voltage indicates that this amplifier may be suitable for applications where absolute precision is less critical.

Maximum Average Bias Current (IIB): 0.0003 uA

Low bias current is beneficial for battery-operated devices, improving energy efficiency and extending battery life.

Surface Mount: YES

The surface mount design allows for compact circuit designs and automated assembly, making it ideal for modern electronics.

Number of Functions: 4

With four functions, this op amp can handle various operational tasks, providing versatility in circuit design.

Package Shape: RECTANGULAR

The rectangular package shape is advantageous for space-efficient layout on PCBs, improving overall circuit density.

Nominal Common Mode Reject Ratio: 70 dB

A high common mode rejection ratio enhances performance in noisy environments, making this op amp effective for precision applications.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3 V makes this op amp compatible with low-voltage systems, suitable for portable applications.

Power Supplies (V): ±1.35/±8/2.7/16

Flexible power supply options offer versatility in design, accommodating various operational needs.

Number of Terminals: 14

With 14 terminals, this op amp provides multiple connection points for increased functionality within circuits.

Maximum Input Offset Current (IIO): 0.0002 uA

An extremely low input offset current ensures minimal error in signal processing, enhancing accuracy.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and supports high-density designs in compact electronic equipment.

Maximum Supply Voltage Limit: 18 V

A maximum supply voltage of 18 V allows for a wide operating range, making it suitable for a variety of applications.

Maximum Operating Temperature: 125 °C

An operating temperature of up to 125 °C enables use in high-temperature environments, making it ideal for automotive applications.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

This ultra-low bias current ensures precision in low-signal applications, particularly advantageous for sensor interfacing.

Frequency Compensation: YES

Integrated frequency compensation simplifies circuit design and enhances stability across a wide range of frequencies.

Minimum Voltage Gain: 2000

A minimum voltage gain of 2000 ensures that even weak signals can be amplified substantially for processing, improving usability.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C allows this op amp to be used in extreme environmental conditions, making it robust for automotive use.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good solderability and corrosion resistance, enhancing the reliability of the connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layout options on printed circuit boards, improving design efficiency.

Maximum Seated Height: 1.75 mm

A low seated height allows for placement in compact designs, providing more flexibility in system design.

Width: 3.9 mm

A narrow width facilitates tight layouts on PCBs, making it suitable for miniaturized electronic devices.

Micropower: YES

With micropower capabilities, this op amp is ideal for low-energy applications, enhancing battery life in portable devices.

Length: 8.65 mm

Compact length helps in space-limited applications, supporting efficient board designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive use, it ensures reliability in harsh conditions, making it suitable for automotive applications.

Low-Bias: YES

Low-bias characteristics make it a great choice for precision applications, reducing signal distortion.

Nominal Unity Gain Bandwidth: 800 kHz

A high unity gain bandwidth allows for effective performance in high-frequency applications, expanding usability.

Technology: CMOS

Leveraging CMOS technology, this op amp offers low power consumption and high integration levels, perfect for modern electronics.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and ease of assembly, improving production efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is versatile for linear signal processing and can be employed in various circuit configurations.

Maximum Supply Current: 0.4 mA

Low supply current helps to minimize power consumption, making this op amp suitable for battery-operated electronic devices.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides flexibility in various circuit applications, enhancing performance in both gain and bandwidth.

Packing Method: TAPE AND REEL

Tape and reel packaging allows for easy handling and automated assembly, streamlining the manufacturing process.

Nominal Slew Rate: 0.5 V/us

A nominal slew rate of 0.5 V/us enables the amplifier to respond quickly to changing signals, making it ideal for dynamic applications.

Terminal Pitch: 1.27 mm

A standard terminal pitch of 1.27 mm allows for compatibility with a wide range of PCB designs and assembly processes.

Technical Specifications

Operational Amplifiers (Op Amps) TS914AIYDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

0.5 V/us

Maximum Input Offset Current (IIO):

200 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

400 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS914AIYDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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