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TS912AIYD

STMicroelectronics

TS912AIYD by STMicroelectronics

TS912AIYD from STMicroelectronics is a dual operational amplifier designed for automotive applications. It features a low input offset voltage of 7 mV, operates within a supply range of 3-10 V, and offers a nominal gain of 2000. Ideal for precision signal processing in compact designs, it ensures reliable performance even at high temperatures.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,311 parts In-Stock

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4,311

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Anansix

USA . 1,130 parts In-Stock

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1,130

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Digiode

USA . 922 parts In-Stock

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922

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IDEA Electronic Components Group

UK . 537 parts In-Stock

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$0.729

100+ parts

-

1k+ parts

$0.656

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537

$0.729

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$0.656

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MKK Technologies

India . 12 parts In-Stock

1+ parts

$1.370

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12

$1.370

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DigiPath Technology Company

USA . 12 parts In-Stock

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$1.370

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12

$1.370

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Advanced Electronics

New Zealand . 53 parts In-Stock

1+ parts

$8.142

100+ parts

$7.409

1k+ parts

$6.676

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53

$8.142

$7.409

$6.676

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Corphita

USA . 4,079 parts In-Stock

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Parana Technologies

USA . 2,055 parts In-Stock

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$0.871

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2,055

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$0.871

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Overview

Elevate your designs with the TS912AIYD from STMicroelectronics, a dual operational amplifier that combines exceptional performance with unmatched reliability. Crafted from high-quality materials and designed for automotive applications, it delivers superior precision and low bias current, ensuring efficiency in even the most demanding environments. Experience the advantages of advanced CMOS technology, providing enhanced stability and a wide supply voltage range, making it an ideal choice for innovative solutions. Trust STMicroelectronics to empower your projects with unparalleled quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures lightweight and cost-effective packaging while providing solid durability.

Maximum Input Offset Voltage: 7000 uV

A relatively high maximum input offset voltage allows for versatility in various applications, though lower values are preferred for precision tasks.

Maximum Average Bias Current (IIB): 0.0003 uA

Very low average bias current makes this op amp suitable for low-power applications, enhancing energy efficiency.

Surface Mount: YES

Surface mount capability allows for compact designs and facilitates automated assembly processes.

No. of Functions: 2

Dual functions increase flexibility and enable multiple applications in a single package.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs.

Nominal Common Mode Reject Ratio: 70 dB

A good common mode rejection ratio enhances the op amp's ability to reject noise and interference, improving signal integrity.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V makes this part ideal for low-voltage applications.

Power Supplies (V): 3/10

The capability to operate on a range of power supplies (3V to 10V) increases application versatility.

No. of Terminals: 8

The 8-terminal configuration offers multiple connection options for versatile circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline offers reduced board space consumption, making it perfect for compact designs.

Maximum Supply Voltage Limit: 18 V

The high supply voltage limit allows for use in a wide range of circuit designs without risk of damage.

Maximum Operating Temperature: 125 °C

Operation at high temperatures is beneficial for automotive and industrial applications, ensuring reliability under harsh conditions.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

Extremely low bias current at 25 °C further enhances energy efficiency and accuracy in sensitive applications.

Frequency Compensation: YES

Integrated frequency compensation helps maintain stability across a range of operating conditions.

Minimum Voltage Gain: 2000

A minimum voltage gain of 2000 makes it suitable for signal amplification in various applications.

Minimum Operating Temperature: -40 °C

Suitable for extreme cold environments, this op amp is ideal for automotive and outdoor applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish provides enhanced reliability and ensures good electrical connections.

Terminal Position: DUAL

Dual terminal positions provide design flexibility and ease of layout in PCB designs.

Maximum Seated Height: 1.75 mm

Low profile increases design flexibility and allows for space-saving solutions on PCBs.

Width: 3.9 mm

Compact width supports applications where space is a constraint.

Micropower: YES

Micropower capabilities make it an excellent choice for battery-operated devices.

Length: 4.9 mm

Short length contributes to the small footprint, ideal for compact electronic designs.

Temperature Grade: AUTOMOTIVE

An automotive grade rating ensures reliability and performance in automotive applications.

Low-Bias: YES

Low-bias current characteristics improve the precision of applications that require high accuracy.

Maximum Negative Supply Voltage Limit: 0 V

This characteristic indicates compatibility with ground-referenced circuits, providing design flexibility.

Nominal Unity Gain Bandwidth: 800 kHz

A high nominal unity gain bandwidth allows for greater frequency response in amplification applications.

Technology: CMOS

CMOS technology delivers low power consumption and high performance, making the op amp suitable for modern applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and rework, enhancing manufacturability.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier classification allows for a broad range of applications, including amplification, filtering, and oscillating.

Maximum Supply Current: 1.4 mA

The maximum supply current is low, which is suitable for battery-powered circuits and achieves longer battery life.

Nominal Negative Supply Voltage (Vsup): 0 V

Setting the nominal negative supply voltage at 0 V allows compatibility with single-supply configurations.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is widely used for precision applications, ensuring reliable performance.

Packing Method: TUBE

Packed in tubes ensures easy handling and protection during shipping and assembly.

Nominal Slow Rate: 0.4 V/us

The slow rate is adequate for many applications, providing a balance between response speed and stability.

Terminal Pitch: 1.27 mm

The terminal pitch is standard for many designs, ensuring compatibility with various PCB layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS912AIYD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS912AIYD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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