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TS912BIYD

STMicroelectronics

TS912BIYD by STMicroelectronics

TS912BIYD by STMicroelectronics is a dual operational amplifier designed for automotive applications. It features a low input offset voltage of 3mV, a nominal voltage of 3V, and operates efficiently with a max supply current of 1.4mA. Ideal for precision signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,440 parts In-Stock

1+ parts

-

100+ parts

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4,440

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Vyrian

USA . 3,605 parts In-Stock

1+ parts

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-

1k+ parts

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3,605

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Anansix

USA . 535 parts In-Stock

1+ parts

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535

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,015 parts In-Stock

1+ parts

$4.718

100+ parts

-

1k+ parts

$4.246

10k+ parts

-

2,015

$4.718

-

$4.246

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MKK Technologies

India . 1,848 parts In-Stock

1+ parts

$8.871

100+ parts

-

1k+ parts

-

10k+ parts

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1,848

$8.871

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DigiPath Technology Company

USA . 1,848 parts In-Stock

1+ parts

$8.871

100+ parts

-

1k+ parts

-

10k+ parts

-

1,848

$8.871

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-

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Corphita

USA . 1,545 parts In-Stock

1+ parts

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1,545

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Parana Technologies

USA . 844 parts In-Stock

1+ parts

-

100+ parts

$5.641

1k+ parts

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10k+ parts

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844

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$5.641

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Overview

Unlock superior performance with the TS912BIYD operational amplifier from STMicroelectronics, a leader in cutting-edge technology. This highly reliable, micropower Op Amp delivers exceptional precision and efficiency across various applications, from automotive to industrial systems. With its compact design and low bias currents, it enhances your project’s effectiveness while reducing energy consumption. Elevate your designs with the quality and innovation that STMicroelectronics is renowned for!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection against environmental factors, making this Op Amp suitable for various applications, including automotive.

Maximum Input Offset Voltage: 3000 uV

A low input offset voltage enhances the precision and accuracy of signal processing, making this Op Amp ideal for applications requiring high fidelity.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current offers benefits in battery-operated and low-power applications, ensuring minimal impact on circuit performance.

Surface Mount: YES

Being surface mount compatible simplifies integration into modern compact circuit designs, allowing for space-saving solutions.

No. of Functions: 2

Having multiple functions in one package increases design flexibility and reduces the number of components required in a circuit, leading to smaller board sizes.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient space utilization on circuit boards, facilitating easier layout and assembly.

Nominal Common Mode Reject Ratio: 70 dB

A high common mode rejection ratio ensures that the Op Amp can effectively eliminate noise from common signals, resulting in clearer output in noisy environments.

Nominal Supply Voltage / Vsup (V): 3

A low nominal supply voltage makes this Op Amp suitable for low-voltage applications, enhancing energy efficiency.

Power Supplies (V): 3/10

The versatile power supply range allows for flexibility in design, accommodating various operational settings.

No. of Terminals: 8

With 8 terminals, this Op Amp provides ample connectivity options for various configurations, enhancing design versatility.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, making it easier to fit into compact circuit designs.

Maximum Supply Voltage Limit: 18 V

A high maximum supply voltage limit enhances the flexibility of use in a wide range of applications while ensuring robust performance.

Maximum Operating Temperature: 125 °C

A high operating temperature limit allows this Op Amp to perform reliably in extreme conditions, particularly in automotive and industrial environments.

Maximum Bias Current (IIB) @25°C: 0.00015 uA

The extremely low bias current at 25 °C ensures minimal power consumption, making this Op Amp particularly suited for low-power applications.

Frequency Compensation: YES

Frequency compensation ensures stability across varying operating conditions, essential for reliable performance in feedback applications.

Minimum Voltage Gain: 2000

A minimum voltage gain of 2000 indicates strong amplification capability, making this Op Amp great for applications requiring significant signal amplification.

Minimum Operating Temperature: -40 °C

The wide operating temperature range makes this Op Amp suitable for use in harsh environments, such as automotive and industrial applications.

Terminal Position: DUAL

Dual terminal positions enhance the ease of routing on PCB layouts, optimizing the design process.

Maximum Seated Height: 1.75 mm

The low seated height facilitates compact assembly and minimizes the space taken on the circuit board.

Width: 3.9 mm

A narrow width further enables efficient use of space on PCBs, allowing for more compact designs.

Micropower: YES

Defined as micropower, this Op Amp is excellent for battery-powered and energy-sensitive applications, extending device life.

Length: 4.9 mm

The compact length allows for effective space management in circuit design, making it easier to integrate into tight layouts.

Temperature Grade: AUTOMOTIVE

An automotive grade ensures reliability and performance in challenging environments, making it suitable for a range of automotive applications.

Low-Bias: YES

Low-bias characteristics improve accuracy and make this Op Amp ideal for precision applications, specifically in low-impact signal processing.

Maximum Negative Supply Voltage Limit: 0 V

Restricting the negative supply voltage improves design simplicity and safety in applications that don't require negative voltage amplification.

Nominal Negative Supply Voltage (Vsup): 0 V

A nominal negative supply voltage of 0 V simplifies the power supply requirements, easing incorporation into various designs.

Nominal Unity Gain Bandwidth: 800 kHz

A high unity gain bandwidth allows for a broad range of applications, including those requiring fast signal processing capabilities.

Technology: CMOS

Based on CMOS technology, this Op Amp offers high efficiency and low power consumption, ideal for modern electronic devices.

Terminal Form: GULL WING

Gull wing terminal form provides secure soldering and stability during PCB assembly, ensuring reliable connections.

Amplifier Type: OPERATIONAL AMPLIFIER

As a standard operational amplifier, it can be used in various applications, including signal conditioning, filtering, and feedback control, showcasing its versatility.

Maximum Supply Current: 1.4 mA

The low maximum supply current supports energy efficiency, particularly in battery-driven applications where power conservation is crucial.

Nominal Slow Rate: 0.4 V/µs

The nominal slow rate offers stability in signal integrity and ensures thorough signal throughput in various applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm aids in compatibility with standard PCB design processes, facilitating integration into existing layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS912BIYD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

800 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

2000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS912BIYD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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