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TS862IAD

STMicroelectronics

TS862IAD by STMicroelectronics

TS862IAD by STMicroelectronics is a dual comparator in a compact SO package, ideal for industrial applications. It features a max input offset voltage of 10 mV, low bias current of 0.6 nA, and operates b/w -40 °C to 85°C. This device ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,579 parts In-Stock

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3,579

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Vyrian

USA . 959 parts In-Stock

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959

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Anansix

USA . 216 parts In-Stock

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216

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,893 parts In-Stock

1+ parts

$3.476

100+ parts

-

1k+ parts

$3.128

10k+ parts

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1,893

$3.476

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$3.128

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MKK Technologies

India . 126 parts In-Stock

1+ parts

$6.536

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126

$6.536

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DigiPath Technology Company

USA . 126 parts In-Stock

1+ parts

$6.536

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126

$6.536

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Corphita

USA . 3,994 parts In-Stock

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3,994

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Parana Technologies

USA . 1,677 parts In-Stock

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$4.156

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1,677

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$4.156

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Overview

Elevate your designs with the TS862IAD from STMicroelectronics, a trusted leader in high-quality semiconductor solutions. This dual comparator offers precision performance in a compact package, making it ideal for industrial applications where reliability is paramount. With ultra-low power consumption and robust temperature resilience, the TS862IAD ensures optimal functionality, empowering you to create efficient and innovative electronic devices that stand out in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection against environmental factors, ensuring reliable performance in various applications.

Maximum Input Offset Voltage: 10000 uV

With a maximum input offset voltage of 10 mV, this comparator offers high precision, making it suitable for sensitive applications that require accurate voltage comparisons.

Maximum Average Bias Current (IIB): 0.0006 uA

The extremely low bias current helps reduce power consumption, which is critical in battery-operated and low-power devices.

Surface Mount: YES

Surface mount capability allows for easier integration into compact PCB designs, saving space and improving assembly efficiency.

No. of Functions: 2

Having two functions increases versatility, allowing the device to perform multiple comparisons in a single package, thus optimizing board space and design complexity.

Package Shape: RECTANGULAR

The rectangular package shape is standard for many applications, providing compatibility with existing manufacturing processes.

Nominal Supply Voltage/Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with the widely used logic levels in digital circuits, enhancing interoperability.

No. of Terminals: 8

Eight terminals offer ample connection points for various input and output configurations, making it suitable for complex designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications where space is limited, supporting compact circuit board designs.

Maximum Supply Voltage Limit: 12 V

A maximum supply voltage limit of 12V provides flexibility for use in a range of applications without exceeding voltage constraints.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures ensures reliability in harsh environments, making it suitable for industrial applications.

Output Type: PUSH-PULL

The push-pull output type allows for quick switching between high and low states, enhancing signal integrity and response time.

Nominal Response Time: 2000 ns

A nominal response time of 2000 ns supports high-speed applications, ensuring fast signal processing and accurate comparisons.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this comparator is suitable for use in extreme cold environments, enhancing its application range.

Terminal Position: DUAL

Dual terminal positioning allows for efficient routing on PCBs, facilitating better layout designs and signal integrity.

Maximum Seated Height: 1.75 mm

The low seated height improves design flexibility and allows for lower-profile assemblies in space-constrained applications.

Width: 3.9 mm

A compact width of 3.9 mm makes it suitable for high-density designs where space is a premium.

Length: 4.9 mm

The short length contributes to a compact design, making it easier to implement in small electronic circuits.

Temperature Grade: INDUSTRIAL

Designed to meet industrial temperature specifications, this comparator is reliable for long-term use in challenging environments.

Technology: BICMOS

The BICMOS technology combines the benefits of both bipolar and CMOS technologies, leading to low power consumption and high-speed performance.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and improves reliability in surface mount applications.

Amplifier Type: COMPARATOR

As a comparator, it is specifically designed for fast and accurate voltage comparisons, making it invaluable in various electronic applications.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch aligns with standard PCB design practices, enhancing compatibility with existing manufacturing technologies.

Technical Specifications

Comparators TS862IAD attributes and parameters. Explore more Comparators devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Technology:

BICMOS

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

600 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Nominal Response Time:

2 µs

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Trade Compliance

TS862IAD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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